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PDF IPI80N06S3L-06 Datasheet ( Hoja de datos )

Número de pieza IPI80N06S3L-06
Descripción Power-Transistor
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo

Total 9 Páginas
		
IPI80N06S3L-06 Hoja de datos, Descripción, Manual
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPB80N06S3L-06
IPI80N06S3L-06, IPP80N06S3L-06
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
5.6 m
80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80N06S3L-06
IPI80N06S3L-06
IPP80N06S3L-06
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N06L06
3N06L06
3N06L06
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
I D,pulse
E AS
T C=25 °C
I D=40 A
Avalanche current, single pulse
I AS
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80
80
320
455
80
±16
136
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2007-11-07

1 page

IPI80N06S3L-06 pdf
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
160
10 V
140
120
100
80
60
40
20
0
01234
V DS [V]
IPB80N06S3L-06
IPI80N06S3L-06, IPP80N06S3L-06
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
14
5V
4.5 V
4V
3.5 V
3V
56
12
10
8
6
4
2
0
0
5V
6V
8V
10 V
50 100
I D [A]
150
7 Typ. transfer characteristics
I D = f(V GS); V DS = 4 V
parameter: T j
160
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 80 A; V GS = 10 V
10
140
120
-55 °C
25 °C
175 °C
8
100
80 6
60
40 4
20
0
0123456
V GS [V]
2
-60 -20 20 60 100 140 180
T j [°C]
Rev. 1.1
page 5
2007-11-07

5 Page



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