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PDF IPB026N06N Data sheet ( Hoja de datos )
| Número de pieza | IPB026N06N | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Type
OptiMOSTM Power-Transistor
Features
• Optimized for synchronous rectification
• 100% avalanche tested
• Superior thermal resistance
• N-channel, normal level
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
VDS
RDS(on),max
ID
Qoss
Qg(0V..10V)
IPB026N06N
60 V
2.6 mW
100 A
65 nC
56 nC
PG-TO263-3
Type
IPB026N06N
Package
PG-TO263-3
Marking
026N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
100 A
100
V GS=10 V, T C=25 °C,
R thJA =50K/W
25
Pulsed drain current2)
I D,pulse T C=25 °C
400
Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 W
110 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev.2.2
page 1
2012-12-20
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
400
10 V 7 V
360
320
6V
280
240
200 5.5 V
160
120
5V
80
40
0
0.0 0.5 1.0 1.5 2.0 2.5
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
400
360
320
280
240
200
160
120
80
40
0
0
175 °C
25 °C
246
VGS [V]
IPB026N06N
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
8
7 5 V 5.5 V 6 V
6
5
4
3 7V
10 V
2
1
0
3.0 0 80 160 240 320 400
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
200
150
100
50
0
8 0 20 40 60 80 100
ID [A]
Rev.2.2
page 5
2012-12-20
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPB026N06N.PDF ] | |
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