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PDF IPB123N10N3G Data sheet ( Hoja de datos )
| Número de pieza | IPB123N10N3G | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
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IPP126N10N3 G
IPB123N10N3 G IPI126N10N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
Product Summary
V DS
R DS(on),max TO-263
ID
100 V
12.3 mΩ
58 A
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G
Package
PG-TO220-3
PG-TO263-3
Marking
126N10N
123N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
PG-TO262-3
126N10N
Parameter
Symbol Conditions
Value
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=46 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
58
42
232
70
±20
94
-55 ... 175
55/175/56
1)J-STD20 and JESD22
2) See figure 3
Unit
A
mJ
V
W
°C
Rev. 2.3
page 1
2010-06-23
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
200
180
10 V
160
7.5 V
140
120 6 V
100
80 5.5 V
60
5V
40
20 4.5 V
00
0
1
23
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
100
4
IPP126N10N3 G
IPB123N10N3 G IPI126N10N3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
25
4.5 V
20
5V
15 6 V
7.5 V
10 V
10
5
0
5 0 20 40 60 80 100
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
100
80 80
60 60
40 40
20
0
0
Rev. 2.3
175 °C
25 °C
246
V GS [V]
20
0
80
page 5
40 80
I D [A]
120
2010-06-23
5 Page 
IPP126N10N3 G
IPB123N10N3 G IPI126N10N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.3
page 11
2010-06-23
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IPB123N10N3G.PDF ] | |
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