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PDF IPD068N10N3G Data sheet ( Hoja de datos )
| Número de pieza | IPD068N10N3G | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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IPD068N10N3 G
OptiMOS®3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPD068N10N3 G
100 V
6.8 mW
90 A
Package
Marking
PG-TO252-3
068N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=90 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
Value
90
72
360
130
±20
150
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.2
page 1
2014-05-19
1 page  
IPD068N10N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
400
10 V
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
18
320
7.5 V
240
6V
160
5.5 V
15
4.5 V
12
9
6
5V
6V
7.5 V
10 V
80 5 V
4.5 V
3
00
012345
VDS [V]
0
0
50 100
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
150
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
160
150
100
50
0
0
Rev. 2.2
25 °C
175 °C
246
VGS [V]
120
80
40
0
80
page 5
50 100
ID [A]
150
2014-05-19
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD068N10N3G.PDF ] | |
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