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PDF IPI90R1K2C3 Datasheet ( Hoja de datos )

Número de pieza IPI90R1K2C3
Descripción Power-Transistor
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo

Total 10 Páginas
		
IPI90R1K2C3 Hoja de datos, Descripción, Manual
CoolMOSPower Transistor
Features
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Product Summary
V DS @ T J=25°C
R DS(on),max @T J=25°C
Q g,typ
IPI90R1K2C3
900 V
1.2
28 nC
PG-TO262
Type
IPI90R1K2C3
Package
PG-TO262
Marking
9R1K2C
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current 2)
I D,pulse
Avalanche energy, single pulse
Avalanche energy, repetitive t AR 2),3)
Avalanche current, repetitive t AR 2),3)
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
Gate source voltage
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=0.92 A, V DD=50 V
I D=0.92 A, V DD=50 V
V DS=0...400 V
static
AC (f>1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T J, T stg
Rev. 1.0
page 1
Value
5.1
3.2
10
68
0.31
0.92
50
±20
±30
83
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2008-07-29

1 page

IPI90R1K2C3 pdf
5 Typ. output characteristics
I D=f(V DS); T J=150 °C
parameter: V GS
7
6
5
4
3
2
1
IPI90R1K2C3
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T J=150 °C
parameter: V GS
20 V
10 V
8V
6 V 5.5 V
5V
4.5 V
4V
14
12
10
8
10 V
6
5V
4 4.8 V
4.5 V
4V
2
0
0 5 10 15
V DS [V]
7 Drain-source on-state resistance
R DS(on)=f(T J); I D=2.8 A; V GS=10 V
20
3.5
0
25 0 2 4 6
I D [A]
8 Typ. transfer characteristics
I D=f(V GS); V DS=20V
parameter: T J
15
8 10
3 25 °C
2.5
10
2
1.5 98 %
150 °C
typ
1
5
0.5
0
-60 -20 20 60 100 140 180
T j [°C]
0
0 2 4 6 8 10
V GS [V]
Rev. 1.0
page 5
2008-07-29

5 Page



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