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PDF IPP230N06L3G Datasheet ( Hoja de datos )

Número de pieza IPP230N06L3G
Descripción Power-Transistor
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo

Total 10 Páginas
		
IPP230N06L3G Hoja de datos, Descripción, Manual
Type
OptiMOS3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
IPB230N06L3 G IPP230N06L3 G
Product Summary
VDS
RDS(on),max
ID
60 V
23 mW
30 A
Type
IPB230N06L3 G IPP230N06L3 G
Package
Marking
PG-TO263-3
230N06L
PG-TO220-3
230N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse3) E AS I D=20 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
1)J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
Rev. 2.2
page 1
Value
30
21
120
13
±20
36
-55 ... 175
Unit
A
mJ
V
W
°C
2012-12-19

1 page

IPP230N06L3G pdf
IPB230N06L3 G IPP230N06L3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
120
10 V 7 V
6V
100
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
45
3.5 V 4 V
4.5 V
5V
40
6V
80
60 5 V
40 4.5 V
20
0
0123
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
80
4V
3.5 V
3V
4
35
30
25
7V
20 10 V
15
5 0 20 40 60 80
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
100 120
40
60 30
40 20
20 10
175 °C
25 °C
0
0123456
VGS [V]
0
0
Rev. 2.2
page 5
10 20 30 40 50
ID [A]
2012-12-19

5 Page



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