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PDF IPP80N04S3-03 Datasheet ( Hoja de datos )

Número de pieza IPP80N04S3-03
Descripción Power-Transistor
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo

Total 9 Páginas
		
IPP80N04S3-03 Hoja de datos, Descripción, Manual
OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
IPB80N04S3-03
IPI80N04S3-03, IPP80N04S3-03
Product Summary
V DS
R DS(on),max (SMD version)
ID
40 V
3.2 m
80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80N04S3-03
IPI80N04S3-03
IPP80N04S3-03
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N0403
3N0403
3N0403
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80
80
320
526
±20
188
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2007-05-03

1 page

IPP80N04S3-03 pdf
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C; SMD
parameter: V GS
320
10 V
7V
280
240
200
160
120
80
40
0
024
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
320
280
240
200
IPB80N04S3-03
IPI80N04S3-03, IPP80N04S3-03
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C; SMD
parameter: V GS
20
5V
18
5.5 V
6V
6.5 V
6.5 V
16
14
12
6V
10
5.5 V
8
6
7V
5V 4
10 V
2
68
0 80 160 240 320
I D [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 80 A; V GS = 10 V; SMD
-55 °C
5
25 °C
175 °C
4
160 3
120
80 2
40
0
2345678
V GS [V]
1
-60 -20
20
60 100 140 180
T j [°C]
Rev. 1.0
page 5
2007-05-03

5 Page



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