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PDF IPB057N06N Data sheet ( Hoja de datos )
| Número de pieza | IPB057N06N | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Type
OptiMOSTM Power-Transistor
Features
• Optimized for synchronous rectification
• 100% avalanche tested
• Superior thermal resistance
• N-channel, normal level
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
VDS
RDS(on),max
ID
Qoss
Qg(0V..10V)
IPB057N06N
60 V
5.7 mW
45 A
32 nC
27 nC
PG-TO263-3
Type
IPB057N06N
Package
PG-TO263-3
Marking
057N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
45 A
45
V GS=10 V, T C=25 °C,
R thJA =50K/W
17
Pulsed drain current2)
I D,pulse T C=25 °C
180
Avalanche energy, single pulse3) E AS I D=45 A, R GS=25 W
60 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev.2.2
page 1
2012-12-20
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
180
160
10 V
7V
140
120
100
80
60
40
20
IPB057N06N
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
16
6V
14 5 V 5.5 V
6V
12
5.5 V
5V
10
8
6
4
7V
10 V
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS [V]
0
0 20 40 60 80 100 120 140 160 180
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
180
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
80
160 70
140
60
120
50
100
40
80
30
60
40 20
20 175 °C
25 °C
10
0
02468
VGS [V]
0
0 5 10 15 20 25 30 35 40 45
ID [A]
Rev.2.2
page 5
2012-12-20
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPB057N06N.PDF ] | |
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