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PDF IPD096N08N3G Data sheet ( Hoja de datos )
| Número de pieza | IPD096N08N3G | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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OptiMOS(TM)3 Power-Transistor
Features
• Ideal for high frequency switching
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
IPD096N08N3 G
IPD096N08N3 G
Product Summary
VDS
RDS(on),max
ID
80 V
9.6 mW
73 A
Package
Marking
PG-TO252-3
096N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse3) E AS I D=46 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
Rev. 2.2
page 1
Value
73
52
292
90
±20
100
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
2014-05-19
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
300
250
10 V 8 V
IPD096N08N3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
30
5 V 5.5 V 6 V
6.5 V
25
7V
200 7 V 20
150
6.5 V
100 6 V
50
0
0123
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
120
5.5 V
5V
4.5 V
4
15
10 8 V
10 V
5
0
5 0 50 100 150 200 250 300
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
80
80
40
0
0
Rev. 2.2
175 °C
25 °C
246
VGS [V]
60
40
20
0
80
page 5
20 40 60 80 100
ID [A]
2014-05-19
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD096N08N3G.PDF ] | |
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