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PDF IPF060N03LG Data sheet ( Hoja de datos )
| Número de pieza | IPF060N03LG | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPF060N03LG (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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Type
OptiMOS™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating
• Halogen-free according to IEC61249-2-21 *
IPD060N03L G
IPS060N03L G
IPF060N03L G
IPU060N03L G
Product Summary
V DS
R DS(on),max
ID
30 V
6 mΩ
50 A
Type
IPD060N03L G
• Avalanche rated
• Pb-free plating; RoHS compliant
IPF060N03L G
IPS060N03L G
IPU060N03L G
Package
PG-TO252-3
PG-TO252-3-23
PG-TO251-3-11
PG-TO251-3
Marking
060N03L
060N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
060N03L
060N03L
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
Pulsed drain current2)
I D,pulse
V GS=4.5 V,
T C=100 °C
T C=25 °C
Avalanche current, single pulse3)
I AS
T C=25 °C
Avalanche energy, single pulse
E AS I D=20 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
1) J-STD20 and JESD22
* IPD060N03L G HF available with SP000680632 only in Malacca, Malaysia
IPS060N03L G available in HF
Rev. 2.1
page 1
50
50
50
43
350
50
60
6
±20
A
mJ
kV/µs
V
2010-04-07
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
120
5V
100 10 V
4.5 V
80
4V
60
40
20
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
100
IPD060N03L G
IPS060N03L G
IPF060N03L G
IPU060N03L G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
20
3V
16
3.2 V
12
3.5 V
4V
3.5 V
8
3.2 V
3V
2.8 V
3
4
0
0 20 40 60
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
4.5 V
5V
10 V
11.5 V
80 100
100
80 80
60 60
40 40
20
175 °C
25 °C
0
012345
V GS [V]
20
0
0 20 40 60 80 100
I D [A]
Rev. 2.1
page 5
2010-04-07
5 Page 
Package Outline
PG-TO251-3-11: Outline
PG-TO251-3
IPD060N03L G
IPS060N03L G
IPF060N03L G
IPU060N03L G
PG-TO251-3-21: Outline
Rev. 2.1
page 11
2010-04-07
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IPF060N03LG.PDF ] | |
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