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Número de pieza | STP105N3LL | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! STP105N3LL
N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ VI DeepGATE™
Power MOSFET in a TO-220 package
Datasheet − production data
Features
TAB
3
2
1
TO-220
Order code
STP105N3LL
VDS
30 V
RDS(on) max. ID
3.5 mΩ 150 A
• RDS(on) * Qg industry benchmark
• Extremely low on-resistance RDS(on)
• High avalanche ruggedness
• Low gate drive power losses
Figure 1. Internal schematic diagram
'Ć7$%
*
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
th
developed using the 6 generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
6
$0Y
Order code
STP105N3LL
Table 1. Device summary
Marking
Packages
105N3LL
TO-220
Packaging
Tube
April 2014
This is information on a product in full production.
DocID023976 Rev 2
1/13
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1 page STP105N3LL
Electrical characteristics
Symbol
Table 7. Source drain diode
Parameter
Test conditions
ISD
(1)
ISDM
(2)
VSD
trr
Qrr
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
IRRM Reverse recovery current
ISD = 40 A, VGS = 0
ISD = 80 A,
di/dt = 100 A/μs,
VDD = 24 V
Figure 15
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Min. Typ. Max. Unit
- 80 A
- 320 A
- 1.1 V
- 28.6
ns
- 22.8
nC
- 1.6
A
DocID023976 Rev 2
5/13
13
5 Page STP105N3LL
Dim.
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Package mechanical data
Table 8. TO-220 type A mechanical data
mm
Min.
Typ.
4.40
0.61
1.14
0.48
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
1.27
16.40
28.90
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
DocID023976 Rev 2
11/13
13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet STP105N3LL.PDF ] |
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