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PDF QS8K2 Data sheet ( Hoja de datos )
| Número de pieza | QS8K2 | |
| Descripción | 30V Nch +Nch Middle Power MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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QS8K2
30V Nch +Nch Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
54mΩ
±3.5A
1.5W
lFeatures
1) Low on - resistance.
2) Built-in G-S protection diode.
3) Small surface mount package(TSMT8)
4) Pb-free lead plating ; RoHS compliant
lOutline
TSMT8
lInner circuit
Datasheet
lPackaging specifications
Packing
Embossed
Tape
lApplication
Reel size (mm)
180
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TR
Marking
K02
lAbsolute maximum ratings (Ta = 25°C) <It is the same ratings for the Tr1 and Tr2>
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
VDSS
30 V
ID ±3.5 A
ID,pulse*1
±12
A
VGSS
±12 V
Power dissipation
total
element
PD*2
1.5
1.25 W
total PD*3 0.7
Junction temperature
Tj 150 ℃
Range of storage temperature
Tstg
-55 to +150
℃
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150730 - Rev.001
1 page  
QS8K2
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Datasheet
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
Junction Temperature
Fig.8 Typical Transfer Characteristics
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/11
20150730 - Rev.001
5 Page 
QS8K2
lDimensions
Datasheet
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
11/11
20150730 - Rev.001
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet QS8K2.PDF ] | |
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