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PDF RDD050N20 Data sheet ( Hoja de datos )
| Número de pieza | RDD050N20 | |
| Descripción | 10V Drive Nch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RDD050N20 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Transistors
10V Drive Nch MOSFET
RDD050N20
RDD050N20
zStructure
Silicon N-channel
MOSFET
zFeatures
1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.
zApplication
Switching
zDimensions (Unit : mm)
CPT3
(1)Base(Gate)
(2)Collector(Drain)
(3)Emitter(Source)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RDD050N20
Taping
TL
2500
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current
Continuous
Pulsed
ID
IDP ∗1
Source Current
(Body Diode)
Avalanche Current
Avalanche Energy
Continuous
Pulsed
IS
ISP
IAS
EAS
∗1
∗2
∗2
Total Power Dissipation (TC=25°C)
PD
Channel Temperature
Tch
Storage Temperature
Tstg
∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C
Limits
200
±30
±5
±20
5
20
5
75
20
150
−55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
6.25
zEquivalent Circuit
∗2
∗1 BODY DIODE
∗1 ∗2 GATE PROTECTION
DIODE
(1)GATE
(2)DRAIN
(3)SOURCE
(1) (2) (3)
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Unit
°C/W
1/5
1 page  
Transistors
zSwitching characteristics measurement circuit
RDD050N20
Fig.1-1 Switching time measurement circuit
Fig.1-2 Switching waveforms
Fig.2-1 Gate charge measurement circuit
Fig.2-2 Gate charge waveform
Fig.3-1 Avalanche measurement circuit
Fig.3-2 Avalanche waveform
5/5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RDD050N20.PDF ] | |
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