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PDF IGCM10F60GA Data sheet ( Hoja de datos )
| Número de pieza | IGCM10F60GA | |
| Descripción | Control Integrated Power System | |
| Fabricantes | LS Power Semitech | |
| Logotipo |  |
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Data Sheet, Oct. 2011
Control Integrated POwer
System (CIPOS™)
IGCM10F60GA
http://www.lspst.com
For Power Management
Application
1 page  
Pin Configuration
(1) VS(U)
(2) VB(U)
(3) VS(V)
(4) VB(V)
(5) VS(W)
(6) VB(W)
(7) HIN(U)
(8) HIN(V)
(9) HIN(W)
(10) LIN(U)
(11) LIN(V)
(12) LIN(W)
(13) VDD
(14) VFO
(15) ITRIP
(16) VSS
Figure 1: Pin configuration
Internal Electrical Schematic
Bottom View
(1) VS(U)
(2) VB(U)
(3) VS(V)
(4) VB(V)
(5) VS(W)
(6) VB(W)
(7) HIN(U)
(8) HIN(V)
(9) HIN(W)
(10) LIN(U)
(11) LIN(V)
(12) LIN(W)
(13) VDD
(14) VFO
(15) ITRIP
(16) VSS
Figure 2: Internal schematic
Data Sheet
VB1
RBS1
VB2
RBS2
HO1
VS1
HO2
VS2
VB3
RBS3
HO3
VS3
HIN1
HIN2
HIN3
LIN1
LIN2
LIN3
VDD
VFO
ITRIP
VSS
Thermistor
LO1
LO2
LO3
5/15
CIPOS™ IGCM10F60GA
(24) NC
(23) P
(22) U
(21) V
(20) W
(19) NU
(18) NV
(17) NW
NC (24)
P (23)
U (22)
V (21)
W (20)
NU (19)
NV (18)
NW (17)
Oct. 2011
5 Page 
CIPOS™ IGCM10F60GA
Dynamic Parameters
(VDD = 15V and TC = 25°C, if not stated otherwise)
Description
Condition
Symbol
Value
Unit
min typ max
Turn-on propagation delay time
ton - 670 - ns
Turn-on rise time
Turn-on switching time
VLIN,HIN = 5V; Iout = 6A,
tr
- 20 - ns
VDC = 300V
tc(on)
80 ns
Reverse recovery time
trr 110 ns
Turn-off propagation delay time
Turn-off fall time
Turn-off switching time
VLIN,HIN = 0V; Iout = 6A,
VDC = 300V
toff
tf
tc(off)
- 820 - ns
- 170 - ns
180 ns
Short circuit propagation delay time From VIT,TH+ to 10% ISC
tSCP
- 1250 -
ns
Input filter time ITRIP
VITRIP = 1V
tITRIPmin
-
530
-
ns
Input filter time at LIN, HIN for turn
on and off
VLIN,HIN = 0V & 5V
tFILIN
- 290 - ns
Fault clear time after ITRIP-fault
Deadtime between low side and
high side
VITRIP = 1V
tFLTCLR
40
65 200 µs
DTPWM 1.0
-
- µs
Deadtime of gate drive circuit
IGBT turn-on energy (includes
reverse recovery of diode)
VDC = 300V, IC = 6A,
TJ = 25°C
150°C
DTIC
Eon
380
- 110
- 155
ns
-
-
µJ
IGBT turn-off energy
VDC = 300V, IC = 6A,
TJ = 25°C
150°C
Eoff
-
-
155
220
-
-
µJ
Diode recovery energy
VDC = 300V, IC = 6A,
TJ = 25°C
150°C
Erec
-
-
45
75
-
-
µJ
Bootstrap Parameters
(TC = 25°C, if not stated otherwise)
Description
Condition
Repetitive peak
reverse voltage
Bootstrap resistance of
U-phase1
VS2 or VS3=300V, TJ=25°C
VS2 and VS3=0V, TJ=25°C
VS2 or VS3=300V, TJ=125°C
VS2 and VS3=0V, TJ=125°C
Reverse recovery time IF=0.6A, di/dt=80A/µs
Forward voltage drop I =20mA, VS2 and VS3=0V
F
Symbol
VRRM
min
600
RBS1
trr_BS
V
F_BS
Value
typ
35
40
50
65
50
2.6
max
Unit
V
ns
V
1 RBS2 and RBS3 have same values to RBS1.
Data Sheet
11/15
Oct. 2011
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet IGCM10F60GA.PDF ] | |
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