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PDF UM6K1N Data sheet ( Hoja de datos )

Número de pieza UM6K1N
Descripción 2.5V Drive Nch+Nch MOS FET
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



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Transistors
2.5V Drive Nch+Nch MOS FET
UM6K1N
UM6K1N
zStructure
Silicon N-channel MOS FET
zFeatures
1) Two 2SK3018 transistors in a single UMT package.
2) The MOS FET elements are independent, eliminating
mutual interference.
3) Mounting cost and area can be cut in half.
4) Low On-resistance.
5) Low voltage drive (2.5V drive) makes this device ideal for
portable equipment.
zExternal dimensions (Unit : mm)
UMT6
2.0
1.3
0.65
0.65
(5)
(6) (4)
0.9
0.7
1pin mark
(1) (3)
(2)
0.2
0.15
Each lead has same dimensions
Abbreviated symbol : K1
zApplications
Interfacing, switching (30V, 100mA)
zPackaging specifications
Type
UM6K1N
Package
Code
Basic ordering unit (pieces)
Taping
TN
3000
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Total power dissipation
Continuous
Pulsed
ID
IDP 1
PD 2
Channel temperature
Tch
Range of storage temperature
Tstg
1 Pw10µs, Duty cycle1%
2 With each pin mounted on the recommended lands.
zInner circuit
Limits
30
±20
±100
±400
150
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
(6)
Tr1
Gate
(5) Protection (4)
Diode
Tr2
Gate
(1) Protection
Diode
(2)
(3)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
A protection diode has been built
in between the gate and the source
to protect against static electricity
when the product is in use.
Use the protection circuit when
rated voltages are exceeded.
zThermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a)
With each pin mounted on the recommended lands.
Limits
833
1042
Unit
°C / W / TOTAL
°C / W / ELEMENT
Rev.B
1/3

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