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PDF R6008FNX Data sheet ( Hoja de datos )
| Número de pieza | R6008FNX | |
| Descripción | Nch 600V 8A Power MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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R6008FNX
Nch 600V 8A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
600V
0.95W
8A
50W
lOutline
TO-220FM
(1)(2)(3)
lFeatures
1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Bulk
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
-
500
-
Marking
R6008FNX
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25°C
Tc = 100°C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAR *3
PD
Tj
Tstg
dv/dt *5
600
8
3.9
32
30
4.3
3.4
4
50
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/13
2012.10 - Rev.B
1 page  
R6008FNX
lElectrical characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
120
100
80
60
40
20
0
0 50 100 150 200
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
100
Operation in this
10 area is limited
by RDS(ON)
1 PW = 100us
PW = 1ms
0.1
Ta = 25ºC
Single Pulse
0.01
0.1
1
PW = 10ms
10 100
1000
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
1000
100
10
Ta = 25ºC
Single Pulse
Rth(ch-a)(t) = ｒ(t)×Rth(ch-a)
Rth(ch-a) = 70ºC/W
1
0.1
0.01
0.001
0.0001
0.0001
0.01
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
1 100
Pulse Width : PW [s]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
5/13
2012.10 - Rev.B
5 Page 
R6008FNX
lElectrical characteristic curves
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
100
VGS = 0V
Pulsed
10
1
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
0.1 Ta = -25ºC
0.01
0
0.5 1 1.5 2
Source - Drain Voltage : VSD [V]
Data Sheet
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
Ta = 25ºC
di / dt = 100A / ms
VGS = 0V
Pulsed
100
10
0.1 1 10 100
Inverse Diode Forward Current : IS [A]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
11/13
2012.10 - Rev.B
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet R6008FNX.PDF ] | |
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