DataSheet.es    


PDF R5011FNX Data sheet ( Hoja de datos )

Número de pieza R5011FNX
Descripción Nch 500V 11A Power MOSFET
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de R5011FNX (archivo pdf) en la parte inferior de esta página.


Total 14 Páginas

No Preview Available ! R5011FNX Hoja de datos, Descripción, Manual

R5011FNX
Nch 500V 11A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
500V
0.52W
11A
50W
lOutline
TO-220FM
(1)(2)(3)
lFeatures
1) Fast reverse recovery time (trr).
lInner circuit
2) Low on-resistance.
3) Fast switching speed.
(1) Gate
(2) Drain
(3) Source
4) Gate-source voltage (VGSS) guaranteed to be 30V.
5) Drive circuits can be simple.
*1 Body Diode
6) Parallel use is easy.
7) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Bulk
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
-
500
-
Marking
R5011FNX
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAR *3
PD
Tj
Tstg
dv/dt *5
Value
500
11
5.4
44
30
8.1
3.5
5.5
50
150
-55 to +150
15
Unit
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/13
2012.07 - Rev.B

1 page




R5011FNX pdf
R5011FNX
lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
120
100
80
60
40
20
0
0 50 100 150 200
Junction Temperature : Tj [°C]
Data Sheet
Fig.2 Maximum Safe Operating Area
100
Operation in this
area is limited
10 by RDS(ON)
1 PW = 100us
PW = 1ms
0.1 PW = 10ms
Ta = 25ºC
Single Pulse
0.01
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
1000
100
10
Ta = 25ºC
Single Pulse
Rth(ch-a)(t) = (t)×Rth(ch-a)
Rth(ch-a) = 70ºC/W
1
0.1
0.01
0.001
0.0001
0.0001
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
0.01 1 100
Pulse Width : PW [s]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
5/13
2012.07 - Rev.B

5 Page





R5011FNX arduino
R5011FNX
lElectrical characteristic curves
Data Sheet
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
100
VGS= 0V
Pulsed
10
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
Ta= 25ºC
di/dt= 100A/μs
VGS= 0V
Pulsed
1
Ta = 125ºC
Ta= 75ºC
0.1 Ta= 25ºC
Ta= -25ºC
0.01
0 0.5 1 1.5
Source - Drain Voltage : VSD [V]
100
10
0.1 1 10 100
Inverse Diode Forward Current : IS [A]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
11/13
2012.07 - Rev.B

11 Page







PáginasTotal 14 Páginas
PDF Descargar[ Datasheet R5011FNX.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
R5011FNXNch 500V 11A Power MOSFETROHM Semiconductor
ROHM Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar