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Número de pieza | R5011FNX | |
Descripción | Nch 500V 11A Power MOSFET | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de R5011FNX (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! R5011FNX
Nch 500V 11A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
500V
0.52W
11A
50W
lOutline
TO-220FM
(1)(2)(3)
lFeatures
1) Fast reverse recovery time (trr).
lInner circuit
2) Low on-resistance.
3) Fast switching speed.
(1) Gate
(2) Drain
(3) Source
4) Gate-source voltage (VGSS) guaranteed to be 30V.
5) Drive circuits can be simple.
*1 Body Diode
6) Parallel use is easy.
7) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Bulk
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
-
500
-
Marking
R5011FNX
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAR *3
PD
Tj
Tstg
dv/dt *5
Value
500
11
5.4
44
30
8.1
3.5
5.5
50
150
-55 to +150
15
Unit
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/13
2012.07 - Rev.B
1 page R5011FNX
lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
120
100
80
60
40
20
0
0 50 100 150 200
Junction Temperature : Tj [°C]
Data Sheet
Fig.2 Maximum Safe Operating Area
100
Operation in this
area is limited
10 by RDS(ON)
1 PW = 100us
PW = 1ms
0.1 PW = 10ms
Ta = 25ºC
Single Pulse
0.01
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
1000
100
10
Ta = 25ºC
Single Pulse
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 70ºC/W
1
0.1
0.01
0.001
0.0001
0.0001
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
0.01 1 100
Pulse Width : PW [s]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
5/13
2012.07 - Rev.B
5 Page R5011FNX
lElectrical characteristic curves
Data Sheet
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
100
VGS= 0V
Pulsed
10
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
Ta= 25ºC
di/dt= 100A/μs
VGS= 0V
Pulsed
1
Ta = 125ºC
Ta= 75ºC
0.1 Ta= 25ºC
Ta= -25ºC
0.01
0 0.5 1 1.5
Source - Drain Voltage : VSD [V]
100
10
0.1 1 10 100
Inverse Diode Forward Current : IS [A]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
11/13
2012.07 - Rev.B
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet R5011FNX.PDF ] |
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