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PDF R5013ANJ Data sheet ( Hoja de datos )
| Número de pieza | R5013ANJ | |
| Descripción | Nch 500V 13A Power MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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R5013ANJ
Nch 500V 13A Power MOSFET
Datasheet
VDSS
RDS(on)(Max.)
ID
PD
500V
0.38Ω
±13A
100W
lOutline
LPT(S)
SC-83
TO-263
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to
be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching Power Supply
Type Tape width (mm)
Basic ordering unit (pcs)
24
1000
Taping code
TL
Marking
R5013ANJ
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
TC = 25°C
TC = 100°C
VDSS
ID*1
ID*1
ID,pulse*2
VGSS
EAS*3
EAR*4
IAR*3
PD
Tj
Tstg
500
±13
±6.4
±52
±30
11.3
6.7
6.5
100
150
-55 to +150
V
A
A
A
V
mJ
mJ
A
W
℃
℃
Reverse diode dv/dt
dv/dt 15 V/ns
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/13
20150730 - Rev.001
1 page  
R5013ANJ
lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Datasheet
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/13
20150730 - Rev.001
5 Page 
R5013ANJ
lElectrical characteristic curves
Datasheet
Fig.22 Inverse Diode Forward Current vs.
Source - Drain Voltage
Fig.23 Reverse Recovery Time vs.
Inverse Diode Forward Current
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
11/13
20150730 - Rev.001
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet R5013ANJ.PDF ] | |
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