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PDF IRF7351PbF Data sheet ( Hoja de datos )
| Número de pieza | IRF7351PbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Applications
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
l Low Power Motor Drive Systems
PD - 97436
IRF7351PbF
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg (typ.)
60V 17.8mΩ@VGS = 10V 24nC
Benefits
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Max.
60
± 20
8.0
6.4
64
2.0
1.28
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
Notes through
are on page 10
www.irf.com
1
11/18/09
1 page  
IRF7351PbF
8
7
6
5
4
3
2
1
0
25
50 75 100 125
TC , Case Temperature (°C)
150
3.5
3.0
2.5 ID = 50µA
2.0
1.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10
0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R 1R 1
CiC= iτ=i/τRi/iRi
R 2R 2
τ2 τ2
R 3R3
τ3 τ3
1E-005 0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
R4R4 Ri (°C/W) τi (sec)
τ4 τ4
τAτA
3.6777
21.765
25.683
0.009926
25.24029
3.723179
11.374 0.348001
10 100 1000
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF7351PbF.PDF ] | |
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