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PDF RUE002N05 Data sheet ( Hoja de datos )
| Número de pieza | RUE002N05 | |
| Descripción | 1.2V Drive Nch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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1.2V Drive Nch MOSFET
RUE002N05
Structure
Silicon N-channel MOSFET
Features
1) High speed switing.
2) Small package(EMT3).
3)Ultra low voltage drive(1.2V drive).
Application
Switching
Dimensions (Unit : mm)
EMT3
(SC-75A)
<SOT-416>
Abbreviated symbol : RH
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RUE002N05
Taping
TL
3000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Tstg
50
8
200
800
125
800
150
150
55 to +150
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
Unit
V
V
mA
mA
mA
mA
mW
C
C
Inner circuit
(3)
∗1
(2)
(1) SOURCE
(2) GATE
(3) DRAIN
∗2
(1)
∗1 BODY DIODE
∗2 ESD PROTECTION DIODE
Thermal resistance
Parameter
Channel to ambient
* Each terminal mounted on a recommended land.
Symbol
Rth (ch-a)*
Limits
833
Unit
C / W
www.rohm.com
○c 2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.06 - Rev.B
1 page  
RUE002N05
Measurement circuits
VGS
RG
ID
RL
VDS
D.U.T.
VDD
Fig.1-1 Switching time measurement circuit
Pulse width
50%
VGS 10%
VDS
10%
90% 50%
10%
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching waveforms
Data Sheet
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
www.rohm.com
○c 2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.06 - Rev.B
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RUE002N05.PDF ] | |
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