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PDF MMDF2N02E Data sheet ( Hoja de datos )

Número de pieza MMDF2N02E
Descripción Power MOSFET ( Transistor )
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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MMDF2N02E
Power MOSFET
2 Amps, 25 Volts
NChannel SO8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
draintosource diode has a low reverse recovery time. These devices
are designed for use in low voltage, high speed switching applications
where power efficiency is important. Typical applications are dcdc
converters, and power management in portable and battery powered
products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives. The avalanche energy is
specified to eliminate the guesswork in designs where inductive loads
are switched and offer additional safety margin against unexpected
voltage transients.
Features
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
IDSS Specified at Elevated Temperatures
Avalanche Energy Specified
Mounting Information for SO8 Package Provided
This is a PbFree Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current Continuous @ TA = 25°C
Drain Current Continuous @ TA = 100°C
Drain Current Single Pulse (tp 10 ms)
Total Power Dissipation @ TA = 25°C (Note 1)
Operating and Storage Temperature Range
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C (VDD = 20 Vdc,
VGS = 10 Vdc, Peak IL = 9.0 Apk,
L = 6.0 mH, RG = 25 W)
Thermal Resistance, JunctiontoAmbient
(Note 1)
VDSS
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
RqJA
25
± 20
3.6
2.5
18
2.0
55 to 150
245
Vdc
Vdc
Adc
Apk
W
°C
mJ
62.5 °C/W
Maximum Lead Temperature for Soldering
Purposes, 0.0625from case for 10 seconds
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on 2square FR4 board (1sq. 2 oz. Cu 0.06thick single sided) with
one die operating, 10 sec. max.
http://onsemi.com
2 AMPERES, 25 VOLTS
RDS(on) = 100 mW
NChannel
D
Discrete
(PbFree)
G
S
MARKING
DIAGRAM
8
1
SO8
CASE 751
STYLE 11
8
F2N02
AYWWG
G
1
F2N02 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Source1
Gate1
Source2
Gate2
1 8 Drain1
2 7 Drain1
3 6 Drain2
4 5 Drain2
ORDERING INFORMATION
Device
Package
Shipping
MMDF2N02ER2G SO8 2500 Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 8
1
Publication Order Number:
MMDFN02E/D

1 page




MMDF2N02E pdf
MMDF2N02E
100
VDD = 10 V
ID = 2 A
VGS = 10 V
TJ = 25°C
10
td(off)
tf
tr
td(on)
1
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
7
TJ = 25°C
6 VGS = 0 V
5
4
3
2
1
0
0.5 0.6 0.7 0.8 0.9
1
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage
versus Current
1.1
di/dt = 300 A/ms
Standard Cell Density
trr
High Cell Density
trr
ta
tb
t, TIME
Figure 11. Reverse Recovery Time (trr)
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance
General Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded, and that the
transition time (tr, tf) does not exceed 10 ms. In addition the
total power averaged over a complete switching cycle must
not exceed (TJ(MAX) TC)/(RqJC).
A power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
nonlinearly with an increase of peak current in avalanche
and peak junction temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 13). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
http://onsemi.com
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