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PDF NTHD5905T1 Data sheet ( Hoja de datos )
| Número de pieza | NTHD5905T1 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTHD5905T1
Power MOSFET
Dual P−Channel ChipFETt
3.0 Amps, 8 Volts
Features
• Low RDS(on) for Higher Efficiency
• Logic Level Gate Drive
• Miniature ChipFET Surface Mount Package
Applications
• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
http://onsemi.com
DUAL P−CHANNEL
3.0 AMPS, 8 VOLTS
RDS(on) = 90 mW
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Steady
Symbol 5 secs State
Drain−Source Voltage
Gate−Source Voltage
Continuous Drain Current
(TJ = 150°C) (Note 1)
TA = 25°C
TA = 85°C
Pulsed Drain Current
Continuous Source Current
(Diode Conduction) (Note 1)
VDS −8.0
VGS "8.0
ID
"4.1
"2.9
"3.0
"2.2
IDM "10
IS −1.8 −0.9
Maximum Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
Operating Junction and Storage
Temperature Range
PD
TJ, Tstg
2.1 1.1
1.1 0.6
−55 to +150
1. Surface Mounted on 1″ x 1″ FR4 Board.
Unit
V
V
A
A
A
W
°C
S1
G1
S2
G2
D1
P−Channel MOSFET
D2
P−Channel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN CONNECTIONS
MARKING
DIAGRAM
D1 8
D1 7
D2 6
D2 5
1 S1
2 G1
3 S2
4 G2
1
2
3
4
8
7
6
5
A9 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
NTHD5905T1 ChipFET
3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2005
February, 2005 − Rev. XXX
1
Publication Order Number:
NTHD5905T1/D
1 page  
NTHD5905T1
TYPICAL ELECTRICAL CHARACTERISTICS
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
Notes: PDM
t1
t2
1.
2.
Duty Cycle, D
Per Unit Base
=
=
t1
Rt t2hJA
=
90°C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10−3
10−2
10 −1
1
Square Wave Pulse Duration (sec)
10
Figure 11. Normalized Thermal Transient Impedance, Junction−to−Ambient
100
600
2
1
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10 −1
Square Wave Pulse Duration (sec)
1
Figure 12. Normalized Thermal Transient Impedance, Junction−to−Foot
10
http://onsemi.com
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