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PDF NTHD4502N Data sheet ( Hoja de datos )
| Número de pieza | NTHD4502N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTHD4502N
Power MOSFET
30 V, 3.9 A, Dual N−Channel ChipFETt
Features
• Planar Technology Device Offers Low RDS(on) and Fast Switching Speed
• Leadless ChipFET Package has 40% Smaller Footprint than TSOP−6.
Ideal Device for Applications Where Board Space is at a Premium.
• ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal for
Applications Where Heat Transfer is Required.
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DC−DC Buck or Boost Converters
• Low Side Switching
• Optimized for Battery and Low Side Switching Applications in
Computing and Portable Equipment
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
t≤5s
Steady
State
t≤5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
30
±20
2.9
2.1
3.9
1.13
2.1
2.2
1.6
0.64
V
V
A
W
A
W
Pulsed Drain Current
tp = 10 ms
ESD Capability
(Note 3)
C = 100 pF,
RS = 1500 W
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
ESD−
HBM
TJ,
TSTG
IS
TL
12
125
−55 to
150
2.5
260
A
V
°C
A
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 0.214 in sq).
3. ESD Rating Information: HBM Class 0.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) TYP
80 mW @ 10 V
110 mW @ 4.5 V
ID MAX
3.9 A
D1 (7, 8)
D2 (5, 6)
G1 G2
(2) (4)
S1 (1)
N−Channel MOSFET
S2 (3)
8
1
ChipFET
CASE 1206A
STYLE 2
PIN
CONNECTIONS
MARKING
DIAGRAM
D1 8
D1 7
D2 6
D2 5
1 S1
2 G1
3 S2
4 G2
1
2
3
4
8
7
6
5
C5 = Specific Device Code
M = Month Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NTHD4502NT1G ChipFET 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
June, 2012 − Rev. 6
1
Publication Order Number:
NTHD4502N/D
1 page  
NTHD4502N
TYPICAL PERFORMANCE CURVES
300
VDS = 0 V
CISS
200
CRSS
VGS = 0 V
TJ = 25°C
12
10
8 VDS
6
24
QG 20
16
VGS
12
100 4
COSS
2
00
10 5 0 5 10 15 20 25 30
VGS VDS
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
QGS
QGD
8
ID = 2.9 A
TJ = 25°C
4
1 23
QG, TOTAL GATE CHARGE (nC)
0
4
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
10
td(off)
td(on)
tr
3
VGS = 0 V
TJ = 25°C
2
1
tf
0.1
1
VDD = 24 V
ID = 1.0 A
VGS = 10 V
10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
http://onsemi.com
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