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PDF VWI35-06P1 Data sheet ( Hoja de datos )
| Número de pieza | VWI35-06P1 | |
| Descripción | IGBT Modules | |
| Fabricantes | IXYS | |
| Logotipo |  |
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IGBT Module
Sixpack in ECO-PAC 2
VWI 35-06P1
I = 31 A
C25
VCES
= 600 V
VCE(sat) typ. = 1.9 V
S9
N 9 X 18
L9
N 5 R 5 W 14
A5
D5
H5
C 1 K 10
A1
F3
G1
Pin arangement see outlines
IGBTs
Symbol
VCES
VGES
IC25
IC80
ICM
VCEK
tSC
(SCSOA)
Ptot
Symbol
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600 V
± 20 V
TC = 25°C
TC = 80°C
VGE
=
±15
V;
R
G
=
47
Ω;
TVJ
=
125°C
RBSOA, Clamped inductive load; L = 100 µH
VCE = 600 V; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C
non-repetitive
31
21
40
VCES
10
A
A
A
µs
TC = 25°C
100 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
Features
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Typical Applications
• AC drives
• power supplies with power factor
correction
V
CE(sat)
VGE(th)
ICES
IGES
td(on)
t
r
td(off)
t
f
Eon
Eoff
C
ies
QGon
RthJC
R
thJH
I
C
=
20
A;
V
GE
=
15
V;
TVJ
=
25°C
TVJ = 125°C
IC = 0.5 mA; VGE = VCE
VCE = VCES;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 10 A
V
GE
=
±15
V;
R
G
=
82
Ω
V = 25 V; V = 0 V; f = 1 MHz
CE GE
VCE = 300 V; VGE = 15 V; IC = 20 A
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
1.9
2.2
4.5
0.7
50
55
300
30
0.9
0.7
1100
65
2.5
2.4 V
V
6.5 V
0.6 mA
mA
100 nA
ns
ns
ns
ns
mJ
mJ
pF
nC
1.3 K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
www.ixys.net
1-5
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
1 page  
VWI 35-06P1
Diode
40
A
30
IF
20
TVJ=150°C
TVJ=100°C
TVJ= 25°C
10
2000
TVJ= 100°C
nC VR = 300V
1500
Qr
1000
500
IF= 30A
IF= 15A
IF= 7.5A
40
TVJ= 100°C
A VR = 300V
30
IRM
20
IF= 30A
IF= 15A
IF= 7.5A
10
0
0 1 2V
VF
Forward current IF versus VF
2.0
1.5
Kf
1.0
0.5
IRM
Qr
0
100 A/µs 1000
-diF/dt
Reverse recovery charge Qr
versus -diF/dt
120
ns
110
trr
100
90
TVJ= 100°C
VR = 300V
IF= 30A
IF= 15A
IF= 7.5A
80
0
0 200 400 600 A8/0µ0s 1000
-diF/dt
Peak reverse current IRM
versus -diF/dt
20
TVJ= 100°C
V IF = 15A
VFR
15
1.6
VFR µs
tfr
1.2
tfr
10
0.8
5 0.4
0.0
0
40 80 120 °C 160
TVJ
Dynamic parameters Qr, IRM
versus TVJ
70
0 200 400 600 A8/0µ0s 1000
-diF/dt
Recovery time trr versus -diF/dt
15-06A
0 0.0
0 200 400 600 A80/µ0s 1000
diF/dt
Peak forward voltage VFR and tfr
versus diF/dt
10 (ZthJH is measured using 50
µm thermal grease)
1
D=0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
FRED
0.1 ZthJH [K/W]
0.01
0.00001 0.0001 0.001
0.01 0.1
t(s)
1
Transient thermal resistance junction to heatsink
0.001
10 100
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
5-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet VWI35-06P1.PDF ] | |
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