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PDF ECH8309 Data sheet ( Hoja de datos )

Número de pieza ECH8309
Descripción P-Channel Power MOSFET
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No Preview Available ! ECH8309 Hoja de datos, Descripción, Manual

Ordering number : ENA1418B
ECH8309
P-Channel Power MOSFET
–12V, –9.5A, 16mΩ, Single ECH8
http://onsemi.com
Features
1.8V drive
Halogen free compliance
Protection diode in
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
--12
±10
--9.5
--40
1.5
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-002
Top View
2.9
85
ECH8309-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
JL
Lot No.
TL
1
0.65
4
0.3
Bottom View
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
ECH8
Electrical Connection
87 6 5
12 3 4
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM/22509PE MSIM TC-00001633 No. A1418-1/7

1 page




ECH8309 pdf
Embossed Taping Specication
ECH8309-TL-H
ECH8309
No. A1418-5/7

5 Page










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