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PDF ECH8601M Data sheet ( Hoja de datos )

Número de pieza ECH8601M
Descripción N-Channel Power MOSFET / Transistor
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! ECH8601M Hoja de datos, Descripción, Manual

Ordering number : ENA1174A
ECH8601M
N-Channel Power MOSFET
24V, 8A, 23mΩ, Dual ECH8
http://onsemi.com
Features
Low ON-resistance
2.5V drive
Common-drain type
Protection diode in
Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (1000mm2×0.8mm) 1unit
When mounted on ceramic substrate (1000mm2×0.8mm)
Ratings
24
±12
8
60
1.5
1.6
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-003
Top View
2.9
85
ECH8601M-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TL
TL Lot No.
1
0.65
4
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
ECH8
Electrical Connection
8765
1234
Semiconductor Components Industries, LLC, 2013
July, 2013
50912 TKIM/72308PE TIIM TC-00001533 No. A1174-1/7

1 page




ECH8601M pdf
Embossed Taping Specication
ECH8601M-TL-H
ECH8601M
No. A1174-5/7

5 Page










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