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Número de pieza | AO4404 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AO4404 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! AO4404
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4404/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be used
to bypass the source inductance. AO4404 and
AO4404L are electrically identical.
-RoHS Compliant
-AO4404L is Halogen Free
Features
VDS (V) = 30V
ID = 8.5A (VGS = 10V)
RDS(ON) < 24mΩ (VGS = 10V)
RDS(ON) < 30mΩ (VGS = 4.5V)
RDS(ON) < 48mΩ (VGS = 2.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
SD
SD
SD
GD
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation TA=70°C
Avalanche Current B
Repetitive avalanche energy 0.3mH B
PD
IAR
EAR
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
8.5
7.1
60
3
2.1
15
34
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient AF
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AO4404.PDF ] |
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