|
|
PDF 23NM50N Data sheet ( Hoja de datos )
| Número de pieza | 23NM50N | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 23NM50N (archivo pdf) en la parte inferior de esta página. Total 21 Páginas | ||
|
No Preview Available !
STB23NM50N, STF23NM50N
STP23NM50N, STW23NM50N
N-channel 500 V, 0.162 Ω, 17 A TO-220, TO-220FP, TO-247, D²PAK
MDmesh™ II Power MOSFET
Features
Order codes
STB23NM50N
STF23NM50N
STP23NM50N
STW23NM50N
VDSS
(@Tjmax)
550 V
RDS(on)
max.
< 0.19 Ω
ID
17 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
3
1
D²PAK
Figure 1. Internal schematic diagram
$
'
3
Table 1. Device summary
Order codes
STB23NM50N
STF23NM50N
STP23NM50N
STW23NM50N
Marking
23NM50N
Package
D²PAK
TO-220FP
TO-220
TO-247
!-V
Packaging
Tape and reel
Tube
May 2011
Doc ID 16913 Rev 4
1/21
www.st.com
21
1 page  
STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 250 V, ID = 17 A
RG = 4.7 Ω VGS = 10 V
(see Figure 17)
Min. Typ. Max. Unit
6.6 ns
19 ns
--
71 ns
29 ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 17 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs
VDD = 60 V
(see Figure 22)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 22)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
17 A
-
68 A
- 1.5 V
286
- 3700
26
ns
nC
A
350
- 4800
27
ns
nC
A
Doc ID 16913 Rev 4
5/21
5 Page 
STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
Package mechanical data
Table 9. TO-220FP mechanical data
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
Figure 23. TO-220FP drawing
L7
A
B
Dia
L6
mm
Typ.
16
D
L5
F1 F2
H
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
E
F
G
G1
L2
L3
Doc ID 16913 Rev 4
L4
7012510_Rev_K
11/21
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet 23NM50N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 23NM50N | N-channel Power MOSFET | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |