DataSheet.es    


PDF K3510 Data sheet ( Hoja de datos )

Número de pieza K3510
Descripción N-CHANNEL POWER MOS FET
Fabricantes Renesas 
Logotipo Renesas Logotipo



Hay una vista previa y un enlace de descarga de K3510 (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! K3510 Hoja de datos, Descripción, Manual

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3510
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3510 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3510
TO-220AB
FEATURES
Super low on-state resistance:
RDS(on) = 8.5 mMAX. (VGS = 10 V, ID = 42 A)
Low Ciss: Ciss = 8500 pF TYP.
Built-in gate protection diode
2SK3510-S
TO-262
2SK3510-ZJ
2SK3510-Z
TO-263
TO-220SMDNote
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
75
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±83
±332
A
A
Total Power Dissipation (TC = 25°C)
PT1
125 W
Total Power Dissipation (TA = 25°C)
Channel Temperature
PT2
Tch
1.5 W
150 °C
(TO-262)
Storage Temperature
Tstg –55 to +150 °C
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS 69 A
EAS 450 mJ
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 35 V, RG = 25 Ω, VGS = 20 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15687EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
©
2001

1 page




K3510 pdf
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
14.0
12.0
P ulsed
10.0
8.0
6.0
4.0
2.0
0.0
-100
VGS = 10 V
ID = 42 A
-50 0
50 100 150
Tch - Channel Temperature - °C
200
SWITCHING CHARACTERISTICS
1000
100
10
1
0.1
tr
tf
td(off)
td(on)
VDD = 38 V
VGS = 10 V
RG = 0
1 10 100
ID - Drain Current - A
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
P ulsed
100
10
VGS = 10 V
1
VGS = 0 V
0.1
0.01
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD - Source to Drain Voltage - V
2
2SK3510
100000
10000
1000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C iss
C oss
VGS = 0 V
f = 1 MHz
C rss
100
0.1
1 10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
70
60
50
40
30
20
10
0
0
VDD = 60 V
VDD = 38 V
VDD = 15 V
ID = 83 A
VGS
VDS
50 100 150
16
14
12
10
8
6
4
2
0
200
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs. DRAIN CURRENT
100
10
0 .1
VGS = 0 V
d i/d t = 1 0 0 A / µ s
1 10
IF - Drain Current - A
100
Data Sheet D15687EJ1V0DS
5

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet K3510.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
K3510N-CHANNEL POWER MOS FETRenesas
Renesas
K3511MOS Field Effect TransistorKexin
Kexin
K3511MOS FIELD EFFECT TRANSISTORRenesas
Renesas
K3515-01MRMOSFET ( Transistor ) - 2SK3515-01MRFuji Electric
Fuji Electric

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar