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Número de pieza | EMB32N03K | |
Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB32N03K (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
35mΩ
ID 5.5A G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2011/10/24
EMB32N03K
LIMITS
±20
5.5
3.6
22
1.25
0.83
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
100
UNIT
°C / W
p.1
1 page Ordering & Marking Information:
Device Name: EMB32N03K for TSOP‐6
1DABC
#1
1D: Device Code, 1D for EMB32N03K
ABC: Date Code
Outline Drawing
C
B1 B
e
D
G
AF
b
A1
Dimension in mm
Dimension A A1 B B1 b C D e F G
Min.
0.85 0 2.50 1.50 0.30 0.08 2.70 0.85 0.20
Typ.
0.95 2.80 1.60 0.40 2.90 0.95
Max.
1.25 0.15 3.10 1.70 0.50 0.20 3.10 1.40 0.60
Footprint
2011/10/24
EMB32N03K
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB32N03K.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB32N03J | Field Effect Transistor | Excelliance MOS |
EMB32N03JS | Field Effect Transistor | Excelliance MOS |
EMB32N03K | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Excelliance MOS |
EMB32N03P | Field Effect Transistor | Excelliance MOS |
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