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PDF K3302 Data sheet ( Hoja de datos )
| Número de pieza | K3302 | |
| Descripción | Silicon N Channel MOS Type Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K3302 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK3302
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3302
Switching Regulator and DC-DC Converter Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.)
• High forward transfer admittance: |Yfs| = 0.4 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
500
500
±30
0.5
1.5
1.3
14.3
0.5
0.13
150
−55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-8MIB
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient
Rth (ch-a)
96.1
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = 100 mH, RG = 25 Ω, IAR = 0.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2006-11-06
1 page  
2SK3302
3
1
Duty = 0.5
0.5
0.3 0.2
0.1
0.05
0.03
0.1
0.05
0.02
0.01
0.01
0.005
0.003
0.001
100 μ
1m
rth − tw
Single pulse
10 m
100 m
Pulse width tw (s)
PDM
t
T
Duty = t/T
Rth (ch-a) = 96.1°C/W
1 10
100
Safe operating area
10
ID max (pulsed) *
1
ID max (continuous)
100 μs *
1 ms *
0.1
DC operation Ta = 25°C
0.01 * Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
0.001
0.1 1 10
VDSS max
100 1000
Drain current ID (A)
EAS − Tch
20
16
12
8
4
0
25 50 75 100 125 150
Channel temperature Tch (°C)
15 V
−15 V
Test circuit
RG = 25 Ω
VDD = 90 V, L = 100 mH
BVDSS
IAR
VDD
VDS
Wave form
EAS
=
1
2
⋅L ⋅I2
⋅ ⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2006-11-06
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K3302.PDF ] | |
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