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PDF FDI9406_F085 Data sheet ( Hoja de datos )
| Número de pieza | FDI9406_F085 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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June 2014
FDI9406_F085
N-Channel PowerTrench® MOSFET
40 V, 110 A, 2.2 mΩ
D
Features
Typ RDS(on) = 1.73mΩ at VGS = 10V, ID = 80A
Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter/Alternator
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
G
TO-262AB
FDI SERIES
S
For current package drawing, please refer to the Fairchild
website at www.fairchildsemi.com/packaging
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
40
±20
110
See Figure 4
174
176
1.18
-55 to + 175
0.85
43
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
FDI9406
FDI9406_F085
Package
TO-262AB
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
Notes:
1: Current is limited by bondwire configuration.
2:
3:
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the solder
maximum
©2014 Fairchild Semiconductor Corporation
FDI9406_F085 Rev. C3
1
www.fairchildsemi.com
1 page  
Typical Characteristics
20
ID = 80A
16
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
12
TJ = 25oC
8
TJ = 175oC
4
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. RDSON vs. Gate Voltage
10
1.8
PULSE DURATION = 80μs
1.6 DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 12. Normalized RDSON vs. Junction
Temperature
1.2
VGS = VDS
1.0 ID = 250μA
0.8
0.6
0.4
0.2
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage vs.
Temperature
1.2
ID = 1mA
1.1
1.0
0.9
0.8
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
10000
1000
100
Ciss
Coss
f = 1MHz
VGS = 0V
Crss
10
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 15. Capacitance vs. Drain to Source
Voltage
10
ID = 80A
VDD = 16V
8
VDD = 20V
VDD = 24V
6
4
2
0
0 20 40 60 80 100 120
Qg, GATE CHARGE(nC)
Figure 16. Gate Charge vs. Gate to Source
Voltage
FDI9406_F085 Rev. C3
5
www.fairchildsemi.com
5 Page | ||
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