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PDF FDI045N10A Data sheet ( Hoja de datos )
| Número de pieza | FDI045N10A | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDP045N10A / FDI045N10A
N-Channel PowerTrench® MOSFET
100 V, 164 A, 4.5 mΩ
November 2013
Features
• RDS(on) = 3.8 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A
• Fast Switching Speed
• Low Gate Charge, QG = 54 nC (Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench® process that has
been tailored to minimize the on-state resistance while main-
taining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
GDS
TO-220
GDS
I2-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon LImited)
- Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
FDP045N10A_F102
FDI045N10A_F102
100
±20
164*
116
120
656
637
6.0
263
1.75
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP045N10A_F102
FDI045N10A_F102
0.57
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDP045N10A / FDI045N10A Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
1
0.5
0.1 0.2
0.1
0.05
0.02
0.01 0.01
Single pulse
0.001
10-5
PDM
t1
t2
*Notes:
1. ZθJC(t) = 0.57oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-4
10-3
10-2
t1,RReeccttaanngguullaarrPPuulslseeDDuruartaiotnio[nse[sc]ec]
10-1
1
©2011 Fairchild Semiconductor Corporation
FDP045N10A / FDI045N10A Rev. C1
5
www.fairchildsemi.com
5 Page | ||
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