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Número de pieza | RJL5013DPP-E0 | |
Descripción | High Speed Power Switching MOS FET | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RJL5013DPP-E0 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! RJL5013DPP-E0
500 V - 14 A - MOS FET
High Speed Power Switching
Features
• Built-in fast recovery diode
• Low on-resistance
RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C)
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
1
23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
G
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Preliminary Datasheet
R07DS1121EJ0100
Rev.1.00
Sep 20, 2013
D
1. Gate
2. Drain
3. Source
S
Ratings
500
±30
14
42
14
42
3
0.5
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
R07DS1121EJ0100 Rev.1.00
Sep 20, 2013
Page 1 of 6
1 page RJL5013DPP-E0
10
Normalized Transient Thermal Impedance vs. Pulse Width
TC = 25°C
Preliminary
D=1
1
0.5
0.2
0.1
0.1 0.05
0.02
01.0S1hot Pulse
0.01
100 μ
1m
θch–c(t) = γS (t) • θch–c
θch–c = 4.17°C/W, TC = 25°C
PDM
D
=
PW
T
PW
T
10 m
100 m
1
Pulse Width PW (s)
10 100
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 250 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
R07DS1121EJ0100 Rev.1.00
Sep 20, 2013
Page 5 of 6
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet RJL5013DPP-E0.PDF ] |
Número de pieza | Descripción | Fabricantes |
RJL5013DPP-E0 | High Speed Power Switching MOS FET | Renesas |
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