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PDF LBSS8402DW1T3G Data sheet ( Hoja de datos )
| Número de pieza | LBSS8402DW1T3G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | LRC | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Power MOSFET
N-Channel/P-Channel SC-88
• We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
LBSS8402DW1T1G
S-LBSS8402DW1T1G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
VDSS
VGS
ID
IDM
PD
TJ, Tstg
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
RθJA
TL
Value
50
± 20
130
520
380
– 55 to
150
328
260
Unit
Vdc
Vdc
mA
mW
°C
°C/W
°C
321
D2 G1 S1
S2 G2 D1
45
6
ORDERING INFORMATION
Device
Marking Shipping
LBSS8402DW1T1G
S-LBSS8402DW1T1G
LBSS8402DW1T3G
S-LBSS8402DW1T3G
402
402
3000 Tape & Reel
10000 Tape & Reel
Rev .A 1/6
1 page  
LESHAN RADIO COMPANY, LTD.
LBSS8402DW1T1G , S-LBSS8402DW1T1G
P-Channel TYPICAL ELECTRICAL CHARACTERISTICS
0.6
VDS = 10 V
0.5
0.4
0.3
25°C
-55°C
150°C
0.2
0.1
0 1 1.5 2 2.5 3 3.5 4
VGS,GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
0.5
0.45 TJ = 25°C
0.4
VGS = 3.5 V
3.25 V
0.35
0.3 3.0 V
0.25
0.2 2.75 V
0.15
2.5 V
0.1
0.05 2.25 V
0
01 2
34
56
78
9 10
VDS,DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. On–Region Characteristics
9
VGS = 4.5 V
8
7
150°C
6
5 25°C
4
-55°C
3
2
0 0.1 0.2 0.3 0.4 0.5 0.6
ID,DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
7
6.5 VGS = 10 V
150°C
6
5.5
5
4.5
4 25°C
3.5
3
-55°C
2.5
2
0 0.1 0.2 0.3 0.4 0.5 0.6
ID,DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
2
1.8 VGS = 10 V
ID = 0.52 A
1.6
1.4
VGS = 4.5 V
1.2 ID = 0.13 A
1
0.8
0.6
-ā55
-5 45 95
TJ, JUNCTION TEMPERATURE( °C)
145
Figure 5. On–Resistance Variation with Temperature
8
VDS = 40 V
7 TJ = 25°C
6
5
4
3 ID = 0.5 A
2
1
0
0 500 1000 1500
Q T , TOTAL GATE CHARGE(pC)
Figure 6. Gate Charge
2000
Rev .A 5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet LBSS8402DW1T3G.PDF ] | |
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