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PDF IRF7769L2PBF Data sheet ( Hoja de datos )

Número de pieza IRF7769L2PBF
Descripción Power MOSFETs
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF7769L2PBF Hoja de datos, Descripción, Manual

l RoHS Compliant, Halogen Free 
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
l Industrial Qualified
IRF7769L2PbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
100V min ±20V max 2.8mΩ@ 10V
Qg tot
Qgd
Vgs(th)
200nC 110nC
2.7V
S
S
D GS
S
S
S
SD
S
Applicable DirectFET Outline and Substrate Outline 
L8 DirectFET™ ISOMETRIC
SB SC
M2 M4
L4 L6 L8
Description
The IRF7769L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems.
The IRF7769L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the
device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance power converters.
Orderable part number
IRF7769L2TRPbF
IRF7769L2TR1PbF
Package Type
DirectFET2 Large Can
DirectFET2 Large Can
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
1000
Note
"TR" suffix
"TR1" suffix EOL notice # 264
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
EAS
IAR
12.00
10.00
8.00
6.00
4.00
Drain-to-Source Voltage
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Package Limited)
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
ID = 74A
3.10
TA= 25°C
TJ = 125°C
3.00
2.90
100 V
±20
124
88 A
20
375
500
260 mJ
74 A
VGS = 7.0V
VGS = 8.0V
VGS = 10V
2.00
0.00
2.0
TJ = 25°C
4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate-to-Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance vs. Gate Voltage
VGS = 15V
2.80
20 40 60 80 100
ID, Drain Current (A)
Fig 2. Typical On-Resistance vs. Drain Current
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.09mH, RG = 25Ω, IAS = 74A.
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IRF7769L2PBF pdf
IRF7769L2PbF
1000
100
TJ = 175°C
10 TJ = 25°C
TJ = -40°C
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100 100μsec
DC
10
10msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
01
1msec
10 100 1000
VDS , Drain-toSource Voltage (V)
Fig11. Maximum Safe Operating Area
125 4.0
ID = 1.0A
3.5 ID = 1.0mA
100 ID = 250μA
3.0
75 2.5
50 2.0
1.5
25
1.0
0
25 50 75 100 125 150 175
TC , CaseTemperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
1200
1000
800
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
ID
TOP 13A
20A
BOTTOM 74A
600
400
200
0
25
50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Drain Current
5
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IRF7769L2PBF arduino
IRF7769L2PbF
Qualification Information
Qualification level
Industrial ††
(per JEDEC JESD47F††† guidelines)
Comments: This family of products has passed JEDEC’s Industrial
qualification. IR’s Consumer qualification level is granted by extension of the
higher Industrial level.
Moisture Sensitivity Level
RoHS Compliant
DFET2
MSL1
(per JEDEC J-STD-020D†††)
Yes
† Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
†† Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
5/6/2014
Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #264).
Updated data sheet based on corporate template.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11
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