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Número de pieza | FDP5500_F085 | |
Descripción | N-Channel UltraFET Power MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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No Preview Available ! FDP5500_F085
N-Channel UltraFET Power MOSFET
55V, 80A, 7mΩ
Features
Typ rDS(on) = 5.1mΩ at VGS = 10V, ID = 80A
Typ Qg(10) = 114nC at VGS = 10V
Simulation Models
-Temperature Compensated PSPICE and SABERTM
Models
Peak Current vs Pulse Width Curve
UIS Rating Curve
Qualified to AEC Q101
RoHS Compliant
Applications
DC Linear Mode Control
Solenoid and Motor Control
Switching Regulators
Automotive Systems
April 2009
Package
DRAIN
(FLANGE)
TO-220AB
SOURCE
DRAIN
GATE
©2009 Fairchild Semiconductor Corporation
FDP5500_F085 Rev. A
1
Symbol
D
G
S
www.fairchildsemi.com
1 page Typical Characteristics
1000
100
100us
10 1ms
LIMITED
BY PACKAGE
1
10ms
DC
OPERATION IN THIS SINGLE PULSE
AREA MAY BE
LIMITED BY rDS(on)
0.1
1
TJ = MAX RATED
TC = 25oC
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
200
Figure 5. Forward Bias Safe Operating Area
1000
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 150oC
STARTING TJ = 25oC
1
0.01
0.1 1 10 100 1000 5000
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
120 VDD = 5V
80
TJ = 175oC
40 TJ = -55oC
TJ = 25oC
0
01234567
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
160
PULSE DURATION = 80µs
VGS = 10V DUTY CYCLE = 0.5% MAX
120 VGS = 6V
VGS = 5.5V
80
VGS = 5V
40
VGS = 4.5V
0
012345
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
40
ID = 80A PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
30
20
TJ = 175oC
10
TJ = 25oC
0
4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
2.2
PULSE DURATION = 80µs
2.0 DUTY CYCLE = 0.5% MAX
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDP5500_F085 Rev. A
5
www.fairchildsemi.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDP5500_F085.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDP5500_F085 | N-Channel UltraFET Power MOSFET | Fairchild Semiconductor |
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