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PDF FDI8441_F085 Data sheet ( Hoja de datos )
| Número de pieza | FDI8441_F085 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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May 2010
FDI8441_F085
N-Channel PowerTrench® MOSFET
40V, 80A, 2.7mΩ
Features
Typ rDS(on) = 2.2mΩ at VGS = 10V, ID = 80A
Typ Qg(10) = 215nC at VGS = 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter / Alternator
Distributed Power Architectures and VRMs
Primary Switch for 12V Systems
©2010 Fairchild Semiconductor Corporation
FDI8441_F085 Rev.A1
1
www.fairchildsemi.com
1 page  
Typical Characteristics
4000
1000
100
10us
100us
10
LIMITED
BY PACKAGE
1 OPERATION IN THIS SINGLE PULSE
AREA MAY BE
TJ = MAX RATED
LIMITED BY rDS(on)
0.1
1
TC = 25oC
10
1ms
10ms
DC
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 5. Forward Bias Safe Operating Area
500
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.01
0.1 1 10 100 1000 5000
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
120 VDD = 5V
TJ = 175oC
80
TJ = 25oC
40
TJ = -55oC
0
2.0 2.5 3.0 3.5 4.0 4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
5.0
160
VGS = 10V PULSE DURATION = 80μs
VGS = 5V
DUTY CYCLE = 0.5% MAX
120
VGS = 4.5V
80 VGS = 4V
40
VGS = 3.5V
0
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
50
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
40
TJ = 25oC
30
TJ = 175oC
20
10
0
3 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
FDI8441_F085 Rev.A1
1.8
PULSE DURATION = 80μs
1.6 DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
5 www.fairchildsemi.com
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