DataSheet.es    


PDF 29SF512 Data sheet ( Hoja de datos )

Número de pieza 29SF512
Descripción SST29SF512
Fabricantes Silicon Storage 
Logotipo Silicon Storage Logotipo



Hay una vista previa y un enlace de descarga de 29SF512 (archivo pdf) en la parte inferior de esta página.


Total 24 Páginas

No Preview Available ! 29SF512 Hoja de datos, Descripción, Manual

512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash
SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040
SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
SST29SF/VF512 / 010 / 020 / 0405.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) Byte-Program, Small Erase Sector flash memories
FEATURES:
Preliminary Specifications
• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
• Single Voltage Read and Write Operations
– 5.0V-only for SST29SF512/010/020/040
– 2.7-3.6V for SST29VF512/010/020/040
Superior Reliability
Endurance: 100,000 Cycles (typical)
Greater than 100 years Data Retention
Low Power Consumption:
Active Current: 10 mA (typical)
Standby Current:
30 µA (typical) for SST29SF512/010/020/040
1 µA (typical) for SST29VF512/010/020/040
Sector-Erase Capability
Uniform 128 Byte sectors
Fast Read Access Time:
55 ns
70 ns
Latched Address and Data
Fast Erase and Byte-Program:
Sector-Erase Time: 18 ms (typical)
Chip-Erase Time: 70 ms (typical)
Byte-Program Time: 14 µs (typical)
Chip Rewrite Time:
1 second (typical) for SST29SF/VF512
2 seconds (typical) for SST29SF/VF010
4 seconds (typical) for SST29SF/VF020
8 seconds (typical) for SST29SF/VF040
Automatic Write Timing
Internal VPP Generation
End-of-Write Detection
Toggle Bit
Data# Polling
TTL I/O Compatibility for SST29SFxxx
CMOS I/O Compatibility for SST29VFxxx
JEDEC Standard
Flash EEPROM Pinouts and command sets
Packages Available
32-pin PLCC
32-pin TSOP (8mm x 14mm)
32-pin PDIP
PRODUCT DESCRIPTION
The SST29SF512/010/020/040 and SST29VF512/010/
020/040 are 64K x8 / 128K x8 / 256K x8 / 512K x8 CMOS
Small-Sector Flash (SSF) manufactured with SSTs propri-
etary, high performance CMOS SuperFlash technology.
The split-gate cell design and thick oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches. The SST29SFxxx devices write
(Program or Erase) with a 4.5-5.5V power supply. The
SST29VFxxx devices write (Program or Erase) with a 2.7-
3.6V power supply. These devices conform to JEDEC stan-
dard pinouts for x8 memories.
Featuring high performance Byte-Program, the
SST29SFxxx and SST29VFxxx devices provide a maxi-
mum Byte-Program time of 20 µsec. To protect against
inadvertent write, they have on-chip hardware and Soft-
ware Data Protection schemes. Designed, manufactured,
and tested for a wide spectrum of applications, these
devices are offered with a guaranteed endurance of at least
10,000 cycles. Data retention is rated at greater than 100
years.
The SST29SFxxx and SST29VFxxx devices are suited for
applications that require convenient and economical updat-
ing of program, configuration, or data memory. For all sys-
tem applications, they significantly improve performance
and reliability, while lowering power consumption. They
inherently use less energy during Erase and Program than
alternative flash technologies. The total energy consumed
is a function of the applied voltage, current, and time of
application. Since for any given voltage range, the Super-
Flash technology uses less current to program and has a
shorter erase time, the total energy consumed during any
Erase or Program operation is less than alternative flash
technologies. They also improve flexibility while lowering
the cost for program, data, and configuration storage appli-
cations.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high density, surface mount requirements, the
SST29SFxxx and SST29VFxxx devices are offered in 32-
pin PLCC and 32-pin TSOP packages. A 600 mil, 32-pin
PDIP is also offered for SST29SFxxx devices. See Figures
1, 2, and 3 for pinouts.
©2001 Silicon Storage Technology, Inc.
S71160-05-000 5/01
505
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
SSF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.

1 page




29SF512 pdf
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash
SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040
SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications
SST29SF/VF040 SST29SF/VF020 SST29SF/VF010 SST29SF/VF512
A11
A9
A8
A13
A14
A17
WE#
VDD
A18
A16
A15
A12
A7
A6
A5
A4
A11
A9
A8
A13
A14
A17
WE#
VDD
NC
A16
A15
A12
A7
A6
A5
A4
A11
A9
A8
A13
A14
NC
WE#
VDD
NC
A16
A15
A12
A7
A6
A5
A4
A11
A9
A8
A13
A14
NC
WE#
VDD
NC
NC
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Standard Pinout
Top View
Die Up
FIGURE 2: PIN ASSIGNMENTS FOR 32-PIN TSOP (8MM X 14MM)
SST29SF/VF512 SST29SF/VF010 SST29SF/VF020 SST29SF/VF040
32
OE#
OE#
OE#
31 A10 A10
A10
30 CE# CE#
CE#
29
DQ7
DQ7
DQ7
28
DQ6
DQ6
DQ6
27
DQ5
DQ5
DQ5
26
DQ4
DQ4
DQ4
25
DQ3
DQ3
DQ3
24
VSS
VSS
VSS
23
DQ2
DQ2
DQ2
22
DQ1
DQ1
DQ1
21
DQ0
DQ0
DQ0
20 A0
A0
A0
19 A1
A1
A1
18 A2
A2
A2
17 A3
A3
A3
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
505 ILL F01.2
SST29SF040 SST29SF020 SST29SF010 SST29SF512
SST29SF512 SST29SF010 SST29SF020 SST29SF040
A18
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
NC
NC
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
2
3
4
5
6 32-pin
7 PDIP
8 Top View
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VDD
WE#
NC
A14
A13
A8
A9
A11
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
VDD
WE#
NC
A14
A13
A8
A9
A11
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
VDD
WE#
A17
A14
A13
A8
A9
A11
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
VDD
WE#
A17
A14
A13
A8
A9
A11
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
FIGURE 3: PIN ASSIGNMENTS FOR 32-PIN PDIP
505 ILL F02b.4
©2001 Silicon Storage Technology, Inc.
5
S71160-05-000 5/01 505

5 Page





29SF512 arduino
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash
SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040
SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications
ADDRESS AMS-0
TRC
TAA
CE#
TCE
OE#
TOE
WE#
DQ7-0
VIH TOLZ
TOHZ
HIGH-Z
TCLZ
TOH
DATA VALID
TCHZ
DATA VALID
HIGH-Z
Note: AMS = Most Significant Address
505 ILL F03.1
AMS = A15 for SST29SF/VF512, A16 for SST29SF/VF010, A17 for SST29SF/VF020 and A18 for SST29SF/VF040
FIGURE 4: READ CYCLE TIMING DIAGRAM
ADDRESS AMS-0
WE#
TAS
OE#
555
TAH
TWP
2AA
TWPH
INTERNAL PROGRAM OPERATION STARTS
TBP
555 ADDR
TDH
TDS
CE#
TCH
DQ7-0
TCS
AA 55 A0 DATA
SW0
SW1
SW2
BYTE
(ADDR/DATA)
505 ILL F04.1
Note: AMS = Most Significant Address
AMS = A15 for SST29SF/VF512, A16 for SST29SF/VF010, A17 for SST29SF/VF020 and A18 for SST29SF/VF040
FIGURE 5: WE# CONTROLLED PROGRAM CYCLE TIMING DIAGRAM
©2001 Silicon Storage Technology, Inc.
11
S71160-05-000 5/01 505

11 Page







PáginasTotal 24 Páginas
PDF Descargar[ Datasheet 29SF512.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
29SF512SST29SF512Silicon Storage
Silicon Storage

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar