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PDF IRF7769L1TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7769L1TRPBF | |
| Descripción | Power MOSFETs | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l RoHS Compliant, Halogen Free
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
l Industrial Qualified
IRF7769L1TRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
100V min ±20V max
Qg tot
Qgd
200nC 110nC
RDS(on)
2.8mΩ@ 10V
Vgs(th)
2.7V
S
S
D GS
S
S
S
SD
S
Applicable DirectFET Outline and Substrate Outline
SB SC
M2
M4
L8 DirectFET ISOMETRIC
L4 L6 L8
Description
The IRF7769L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems.
The IRF7769L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the
device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance power converters.
Part number
IRF7769L1TRPbF
Package Type
DirectFET Large Can
Standard Pack
Form
Quantity
Tape and Reel
4000
Note
"TR" suffix
Absolute Maxim um Ratings
Parameter
V DS Drain-to-Source Voltage
V GS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
E AS
IAR
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Package Limited)
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
100
±20
124
88
20
375
500
260
74
Units
V
A
mJ
A
12.00
10.00
8.00
6.00
4.00
ID = 74A
TJ = 125°C
3.10
TA= 25°C
3.00
2.90
VGS = 7.0V
VGS = 8.0V
VGS = 10V
2.00
0.00
2.0
TJ = 25°C
4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
VGS = 15V
2.80
20 40 60 80 100
ID, Drain Current (A)
Fig 2. Typical On-Resistance vs. Drain Current
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.09mH, RG = 25Ω, IAS = 74A.
1 www.irf.com © 2012 International Rectifier
February 18, 2013
1 page  
IRF7769L1TRPbF
1000
100
TJ = 175°C
10 TJ = 25°C
TJ = -40°C
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100 100μsec
DC
10
10msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
01
1msec
10 100 1000
VDS , Drain-toSource Voltage (V)
Fig11. Maximum Safe Operating Area
125 4.0
ID = 1.0A
3.5 ID = 1.0mA
100 ID = 250μA
3.0
75 2.5
50 2.0
1.5
25
1.0
0
25 50 75 100 125 150 175
TC , CaseTemperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
1200
1000
800
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
ID
TOP 13A
20A
BOTTOM 74A
600
400
200
0
25
50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Drain Current
5 www.irf.com © 2012 International Rectifier
February 18, 2013
5 Page | ||
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| PDF Descargar | [ Datasheet IRF7769L1TRPBF.PDF ] | |
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