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PDF NDS9405 Data sheet ( Hoja de datos )

Número de pieza NDS9405
Descripción Single P-Channel Enhancement Mode Field Effect Transistor
Fabricantes ETC 
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N
NDS9405
Single P-Channel Enhancement Mode Field Effect Transistor
February 1996
General Description
These P-Channel enhancement mode power field effect
transistors are produced using National's proprietary, high cell
density, DMOS technology. This very high density process is
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as notebook computer power management
and other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are needed.
Features
-4.3A, -20V. RDS(ON) = 0.10@ VGS = -10V
High density cell design for extremely low RDS(ON)
High power and current handling capability in a widely used
surface mount package.
____________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous TA = 25°C
- Continuous TA = 70°C
- Pulsed
TA = 25°C
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
NDS9405
-20
± 20
± 4.3
± 3.3
± 20
2.5
1.2
1
-55 to 150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
NDS9405.SAM

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NDS9405 pdf
Typical Electrical Characteristics (continued)
1.15
1.1
I D = -250µA
1.05
1
0.95
0.9
-50
-25
0
25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage
Variation with Temperature.
20
10 VGS = 0V
5
2
1
TJ = 125°C
0.1
25°C
-55°C
0.01
0 0.5 1 1.5 2
-VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage Variation with
Source Current and Temperature.
2500
2000
1500
1000
C iss
C oss
500
300
0.1
f = 1 MHz
VGS = 0V
C rss
0.2
0.5 1
2
5 10
-VDS , DRAIN TO SOURCE VOLTAGE (V)
20
Figure 9. Capacitance Characteristics.
10
ID = -4.3A
8
6
VDS= -5V
-15V
-10V
4
2
0
0 10 20 30
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
40
VIN
VG S
RGEN
G
-VD D
RL
D
VOUT
DUT
S
Figure 11. Switching Test Circuit.
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VO U T
10%
10%
90%
VIN
10%
50%
50%
PULSE W IDTH
Figure 12. Switching Waveforms.
INVERTED
NDS9405.SAM

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