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PDF IRF7749L1TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7749L1TRPBF | |
| Descripción | Power MOSFETs | |
| Fabricantes | International Rectifier | |
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IRF7749L1TRPbF
Applications
l RoHS Compliant, Halogen Free
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
l Industrial Qualified
Applicable DirectFET Outline and Substrate Outline
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
60V min ±20V max 1.1mΩ@ 10V
Qg tot
Qgd
Vgs(th)
200nC
71nC
2.9V
S
S
D GS
S
S
S
SD
S
L8
DirectFET ISOMETRIC
SB SC
M2 M4
L4 L6 L8
Description
The IRF7749L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems.
The IRF7749L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance power converters.
Ordering Information
Base part number
IRF7749L1TRPbF
Package Type
DirectFET Large Can
Standard Pack
Form
Tape and Reel
Quantity
4000
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Package Limited)
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Orderable Part Number
IRF7749L1TRPbF
Max.
60
±20
200
140
33
375
800
260
120
Units
V
A
mJ
A
12.0
10.0
8.0
ID = 120A
1.60
TC= 25°C
1.40
VGS = 6.0V
VGS = 8.0V
VGS = 10V
VGS = 14V
6.0 1.20
TJ = 25°C
4.0
TJ = 125°C
1.00
2.0
0.0
4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
1 www.irf.com © 2012 International Rectifier
0.80
40
80 120 160
ID, Drain Current (A)
200
Fig 2. Typical On-Resistance vs. Drain Current
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.035mH, RG = 25Ω, IAS = 120A.
February 18, 2013
1 page  
IRF7749L1TRPbF
1000
100
TJ = 175°C
TJ = 25°C
10 TJ = -40°C
VGS = 0V
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
100
1msec
10 DC
10msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
01
10 100
VDS , Drain-toSource Voltage (V)
Fig11. Maximum Safe Operating Area
200
160
120
80
40
0
25 50 75 100 125 150 175
TC , CaseTemperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
1200
1000
800
4.5
4.0 ID = 1.0A
ID = 1.0mA
3.5 ID = 250μA
3.0
2.5
2.0
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
ID
TOP 20A
31A
BOTTOM 120A
600
400
200
0
25
50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Drain Current
5 www.irf.com © 2012 International Rectifier
February 18, 2013
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| PDF Descargar | [ Datasheet IRF7749L1TRPBF.PDF ] | |
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