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PDF FDP053N08B Data sheet ( Hoja de datos )
| Número de pieza | FDP053N08B | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDP053N08B
N-Channel PowerTrench® MOSFET
80 V, 120 A, 5.3 mΩ
June 2014
Features
• RDS(on) = 4.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A
• Low FOM RDS(on) * QG
• Low Reverse-Recovery Charge, Qrr = 62.5 nC
• Soft Reverse-Recovery Body Diode
• Enables High Efficiency in Synchronous Rectification
• Fast Switching Speed
• 100% UIL Tested
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
D
GDS TO-220
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
* Package limitation current is 75A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP053N08B
80
±20
120*
85.2*
75
480
365
6.0
146
0.97
-55 to +175
300
FDP053N08B
1.03
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2012 Fairchild Semiconductor Corporation
FDP053N08B Rev. C3
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
1.5
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
Single pulse
0.001
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 1.03oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
Rt1e, cRteacntagnuglualraPr PuulslseeDDuurraattiioonn[[sseecc]]
10-1
1
©2012 Fairchild Semiconductor Corporation
FDP053N08B Rev. C3
5
www.fairchildsemi.com
5 Page | ||
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| PDF Descargar | [ Datasheet FDP053N08B.PDF ] | |
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