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PDF IRF7842TRPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF7842TRPbF | |
| Descripción | Power MOSFETs | |
| Fabricantes | International Rectifier | |
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Applications
l Synchronous MOSFET for Notebook
Processor Power
l Secondary Synchronous Rectification
for Isolated DC-DC Converters
l Synchronous Fet for Non-Isolated
DC-DC Converters
l Lead-Free
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
IRF7842PbF
HEXFET® Power MOSFET
VDSS
RDS(on) max Qg (typ.)
:40V 5.0m @VGS = 10V 33nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Base Part Number Package Type
IRF7842PbF
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7842PbF
IRF7842TRPbF
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
40
± 20
18
14
140
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes through
are on page 10
1 www.irf.com © 2014 International Rectifier
Typ.
–––
–––
Max.
20
50
Units
°C/W
Submit Datasheet Feedback
July 8, 2014
1 page  
IRF7842PbF
18
16
14
12
10
8
6
4
2
0
25
50 75 100 125
TJ , Junction Temperature (°C)
150
2.4
2.0
ID = 250μA
1.6
1.2
0.8
0.4
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.001
0.0001
1E-006
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τCτ 10.48 0.138167
τ3τ3 26.83 1.8582
12.69 44.8
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
July 8, 2014
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF7842TRPbF.PDF ] | |
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