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Número de pieza | FDP085N10A | |
Descripción | N-Channel PowerTrench MOSFET | |
Fabricantes | micross | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDP085N10A (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! N-Channel Power Trench Mosfet Chip
100V, 96A, 8.5mΩ1
Part
FDP085N10A
V(BR)DSS
100V
IDn
96A
RDS(on) Max
8.5mΩ1
Die Size
2.4 x 4.4 mm2
See page 2 for ordering part numbers & supply formats
FDP085N10A
Applications
Features
• High density AC / DC Converters
• Motor drives & Micro Inverters
• High Power & Current Handling Capability
• Low RDS (on) per mm2
Maximum Ratings
• Low Gate Charge, Fast Switching
Symbol
VDSS
VGSS
ID
IDM
TJ, TSTG
EAS
dv/dt
Parameter
Drain to Source Voltage
Drain Current2
Gate to Source Voltage
Continuous (TC = 25°C)
Drain Current3
Continuous (TC = 100°C)
Pulsed
Operation Junction & Storage Temperature
Single Pulsed Avalanche
Energy4
Peak Diode Recovery dv/dt4
L = 3mH, IAS = 13.4A, RG=25Ω
Starting TJ =25°C
ISD ≤ 96A, di/dt ≤ 200A/µs, VDD ≤ BVDSS
Starting TJ=25°C
Ratings
100
±20
96
68
384
-55 to 175
269
6
Units
V
V
A
°C
mJ
V/ns
Static Characteristics, TJ = 25° unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
Drain to Source Breakdown Voltage
Gate threshold Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current @ 150°C
Gate to Body Leakage Current
Static Drain to Source On Resistance1
ID = 250µA, VGS = 0V
VGS = VDS, ID =250µA
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V
VGS = ±20V , VDS = 0V
VGS = 10V, ID = 96A
100
2.0
-
-
-
-
Notes:
1. Defined by chip design, not subject to 100% production test at wafer level
2. Performance will vary based on assembly technique and substrate choice
3. Repetitive Rating: Pulse width limited by maximum junction temperature
- -V
- 4.0 V
- 1 µA
- 500
- ±100 nA
7.35 8.5 mΩ
©2014 Fairchild Semiconductor Corporation & Micross Components
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet FDP085N10A.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDP085N10A | N-Channel PowerTrench MOSFET | micross |
FDP085N10A | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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