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PDF K3669 Data sheet ( Hoja de datos )

Número de pieza K3669
Descripción MOSFET ( Transistor ) - 2SK3669
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! K3669 Hoja de datos, Descripción, Manual

2SK3669
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII)
2SK3669
Switching Regulator, Audio Amplifier and Motor Drive
Applications
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 95 m(typ.)
High forward transfer admittance: |Yfs| = 6 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 100 V)
www.DataSheet4U.cEonmhancement mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
DC (Note 1)
Drain current
Pulse (tw 10 ms)
(Note 1)
Pulse (tw 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy
(Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
IDP
PD
EAS
IAR
EAR
Tch
Tstg
100
100
±20
10
15
28
20
280
10
2
150
55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (chc)
Rth (cha)
6.25
125
°C/ W
°C/ W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 3.44 mH, IAR = 10 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2006-11-20

1 page




K3669 pdf
www.DataSheet4U.com
2SK3669
rth – tw
3
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
0.003
10 μ
Single pulse
100 μ
PDM
t
T
Duty = t/T
Rth (ch-c) = 6.25°C/W
1m
10 m
100 m
Pulse width tw (S)
1
10
Safe operating area
100
ID max (pulsed)*
10
ID max (continuous)
5
3
10 ms*
100 μs*
1 ms*
1
0.5
0.3
0.1
* Single nonrepetitive pulse
0.05 Tc = 25°C
0.03 Curves must be derated
linearly with increase in
0.01 temperature.
0.1 0.3
1
3
VDSS max
10 30 100
Drain-source voltage VDS (V)
300
EAS – Tch
300
240
180
120
60
0
25 50
75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 50 V, L = 3.44 mH
Waveform
ΕAS
=
1
2
L
I2
⎜⎛
⎜⎝
BVDSS
BVDSS VDD
⎟⎞
⎟⎠
5 2006-11-20

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