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PDF PDTC114EEF Data sheet ( Hoja de datos )
| Número de pieza | PDTC114EEF | |
| Descripción | NPN resistor-equipped transistor | |
| Fabricantes | Philips | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC114E series
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
Product specification
Supersedes data of 2003 Apr 10
2004 Aug 05
1 page  
Philips Semiconductors
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
Product specification
PDTC114E series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
VCB = 50 V; IE = 0
VCE = 30 V; IB = 0
VCE = 30 V; IB = 0; Tj = 150 °C
VEB = 5 V; IC = 0
VCE = 5 V; IC = 5 mA
IC = 10 mA; IB = 0.5 mA
IC = 100 µA; VCE = 5 V
IC = 10 mA; VCE = 0.3 V
RR-----21-- resistor ratio
Cc collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
MIN.
−
−
−
−
30
−
−
2.5
7
TYP.
−
−
−
−
−
−
1.1
1.8
10
MAX.
100
1
50
400
−
150
0.8
−
13
UNIT
nA
µA
µA
µA
mV
V
V
kΩ
0.8 1
1.2
− − 2.5 pF
2004 Aug 05
5
5 Page 
Philips Semiconductors
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
Plastic surface mounted package; 3 leads
Product specification
PDTC114E series
SOT23
DB
E AX
3
1
e1 bp
e
2
wM B
HE v M A
A
A1
Q
detail X
Lp
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
mm
1.1
0.9
0.1
0.48 0.15
0.38 0.09
3.0
2.8
E
1.4
1.2
e
e1 HE Lp
Q
v
1.9
0.95
2.5
2.1
0.45 0.55
0.15 0.45
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
TO-236AB
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2004 Aug 05
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PDTC114EEF.PDF ] | |
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