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Número de pieza ZXGD3107N8TC
Descripción SYNCHRONOUS MOSFET CONTROLLER
Fabricantes Diodes 
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ZXGD3107N8TC datasheet

1 Page

ZXGD3107N8TC pdf
ZXGD3107N8
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
VCC = 10V; RBIAS = 18kΩ (IBIAS = 0.56mA); RREF = 7.5kΩ (IREF = 1.23mA)
Characteristic
Input Supply
Supply to GND Voltage
Supply to GND Voltage
Drain to GND Voltage
Quiescent Current
Gate Driver
Gate Peak Source Current
Gate Peak Sink Current
Detector under DC condition
Turn-off Threshold Voltage
Gate Output Voltage
Switching Performance
Turn-on Propagation Delay
Gate Rise Time
Turn-off Propagation Delay
Gate Fall Time
Symbol
VCC(ON)
VCC(OFF)
VD
IQ
ISOURCE
ISINK
VT
VG(off)
VG
td(rise)
tr
td(fall)
tf
Min
40
40
200
-
-
-
-20
-
5.0
8.0
-
-
-
-
Typ Max
-
-
-
1.79
-
-
-
-
2-
7-
-10 0
0.2 0.6
7.8 -
9.4 -
70 -
175 -
15 -
20 -
Unit
Test Condition
V VD = -100mV @ Icc = 10µA
V VD = 1V @ Icc = 10µA
V ID = 1µA
mA VD ≥ 0mV
A Capacitive load: CL = 20nF
mV VG = 1V
VD ≥ 1V
V VD = -50mV
VD = -100mV
Capacitive load only
ns
Rise and fall measured 10% to 90%
Refer to application test circuit below
Test Circuit for Switching Performance
Flyback transformer
Magnetising inductance = 820μH
RREF
7.5KΩ
RBIAS
18KΩ
Vcc = 10V
Output load
REF BIAS Vcc
ZXGD3107
C1
1uF
DRAIN
GATE GND
VG
Test conditions
Switching frequency = 100kHz
Continuous conduction mode
VD
MOSFET Qg(tot) = 82nC
RDS(on) = 15mΩ
ZXGD3107N8
Document Number DS37887 Rev. 1 - 2
5 of 13
www.diodes.com
August 2015
© Diodes Incorporated

5 Page

ZXGD3107N8TC arduino
ZXGD3107N8
Application Information (cont.)
Gate Driver
The controller is provided with single channel high-current Gate drive output, capable of driving one or more N-channel power MOSFETs. The
controller can operate from Vcc of 4.5V to drive both standard MOSFETs and logic level MOSFETs.
The GATE pin should be as close to the MOSFETs Gate as possible. A resistor in series with GATE pin helps to control the rise time and
decrease switching losses due to Gate voltage oscillation. A diode in parallel to the resistor is typically used to maintain fast discharge of the
MOSFET’s Gate.
Figure 3 - Typical connection of the ZXGD3107 to the synchronous MOSFET
Quiescent Current Consumption
The quiescent current consumption of the controller is the sum of IREF and IBIAS. For an application that requires ultra-low standby power
consumption, IREF and IBIAS can be further reduced by increasing the value of resistor RREF and RBIAS.
Bias Current
IBIAS
0.25
0.35
0.45
0.56
0.6
0.8
Ref Current
IREF
0.78
0.94
1.1
1.23
1.34
1.6
Bias Resistor
RBIAS
39.8k
28.4k
22.1k
18k
16.6k
12.4k
Ref Resistor
RREF
11.9k
9.8k
8.4k
7.5k
6.9k
5.8k
Quiescent Current
IQ
1.03mA
1.29mA
1.55mA
1.79mA
1.94mA
2.4mA
Table 2 Quiescent current consumption for different resistor values at Vcc=10V
IREF also controls the Gate driver peak sink current whilst IBIAS controls the peak source current. At the default current value of IREF and IBIAS of
1.23mA and 0.56mA, the Gate driver is able to provide 2A source and 6A sink current. The Gate current decreases if IREF and IBIAS are reduced.
Care must be taken in reducing the controller quiescent current so that sufficient drive current is still delivered to the MOSFET particularly for high-
switching frequency application.
ZXGD3107N8
Document Number DS37887 Rev. 1 - 2
10 of 13
www.diodes.com
August 2015
© Diodes Incorporated

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