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SYNCHRONOUS MOSFET CONTROLLER - ZXGD3107N8 - Diodes

Número de pieza ZXGD3107N8
Descripción SYNCHRONOUS MOSFET CONTROLLER
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ZXGD3107N8 datasheet
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ZXGD3107N8
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
VCC = 10V; RBIAS = 18kΩ (IBIAS = 0.56mA); RREF = 7.5kΩ (IREF = 1.23mA)
Characteristic
Input Supply
Supply to GND Voltage
Supply to GND Voltage
Drain to GND Voltage
Quiescent Current
Gate Driver
Gate Peak Source Current
Gate Peak Sink Current
Detector under DC condition
Turn-off Threshold Voltage
Gate Output Voltage
Switching Performance
Turn-on Propagation Delay
Gate Rise Time
Turn-off Propagation Delay
Gate Fall Time
Symbol
VCC(ON)
VCC(OFF)
VD
IQ
ISOURCE
ISINK
VT
VG(off)
VG
td(rise)
tr
td(fall)
tf
Min
40
40
200
-
-
-
-20
-
5.0
8.0
-
-
-
-
Typ Max
-
-
-
1.79
-
-
-
-
2-
7-
-10 0
0.2 0.6
7.8 -
9.4 -
70 -
175 -
15 -
20 -
Unit
Test Condition
V VD = -100mV @ Icc = 10µA
V VD = 1V @ Icc = 10µA
V ID = 1µA
mA VD ≥ 0mV
A Capacitive load: CL = 20nF
mV VG = 1V
VD ≥ 1V
V VD = -50mV
VD = -100mV
Capacitive load only
ns
Rise and fall measured 10% to 90%
Refer to application test circuit below
Test Circuit for Switching Performance
Flyback transformer
Magnetising inductance = 820μH
RREF
7.5KΩ
RBIAS
18KΩ
Vcc = 10V
Output load
REF BIAS Vcc
ZXGD3107
C1
1uF
DRAIN
GATE GND
VG
Test conditions
Switching frequency = 100kHz
Continuous conduction mode
VD
MOSFET Qg(tot) = 82nC
RDS(on) = 15mΩ
ZXGD3107N8
Document Number DS37887 Rev. 1 - 2
5 of 13
www.diodes.com
August 2015
© Diodes Incorporated





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