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PDF ZXGD3107N8 Datasheet ( Hoja de datos )

Número de pieza ZXGD3107N8
Descripción SYNCHRONOUS MOSFET CONTROLLER
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ZXGD3107N8 datasheet

1 Page

ZXGD3107N8 pdf
ZXGD3107N8
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
VCC = 10V; RBIAS = 18kΩ (IBIAS = 0.56mA); RREF = 7.5kΩ (IREF = 1.23mA)
Characteristic
Input Supply
Supply to GND Voltage
Supply to GND Voltage
Drain to GND Voltage
Quiescent Current
Gate Driver
Gate Peak Source Current
Gate Peak Sink Current
Detector under DC condition
Turn-off Threshold Voltage
Gate Output Voltage
Switching Performance
Turn-on Propagation Delay
Gate Rise Time
Turn-off Propagation Delay
Gate Fall Time
Symbol
VCC(ON)
VCC(OFF)
VD
IQ
ISOURCE
ISINK
VT
VG(off)
VG
td(rise)
tr
td(fall)
tf
Min
40
40
200
-
-
-
-20
-
5.0
8.0
-
-
-
-
Typ Max
-
-
-
1.79
-
-
-
-
2-
7-
-10 0
0.2 0.6
7.8 -
9.4 -
70 -
175 -
15 -
20 -
Unit
Test Condition
V VD = -100mV @ Icc = 10µA
V VD = 1V @ Icc = 10µA
V ID = 1µA
mA VD ≥ 0mV
A Capacitive load: CL = 20nF
mV VG = 1V
VD ≥ 1V
V VD = -50mV
VD = -100mV
Capacitive load only
ns
Rise and fall measured 10% to 90%
Refer to application test circuit below
Test Circuit for Switching Performance
Flyback transformer
Magnetising inductance = 820μH
RREF
7.5KΩ
RBIAS
18KΩ
Vcc = 10V
Output load
REF BIAS Vcc
ZXGD3107
C1
1uF
DRAIN
GATE GND
VG
Test conditions
Switching frequency = 100kHz
Continuous conduction mode
VD
MOSFET Qg(tot) = 82nC
RDS(on) = 15mΩ
ZXGD3107N8
Document Number DS37887 Rev. 1 - 2
5 of 13
www.diodes.com
August 2015
© Diodes Incorporated

5 Page

ZXGD3107N8 arduino
ZXGD3107N8
Application Information (cont.)
Layout Guidelines
When laying out the PCB, care must be taken in decoupling the ZXGD3107 closely to VCC and ground with 1μF low-ESR, low-ESL X7R type
ceramic bypass capacitor. If the converter’s output voltage is higher than 40V, a series voltage regulator between the converter’s output voltage
and the Vcc pin can be used to get a stable Vcc voltage.
GND is the ground reference for the internal high-voltage amplifier as well as the current return for the Gate driver. So the ground return loop
should be as short as possible. Sufficient PCB copper area should be allocated to the Vcc and GND pin for heat dissipation especially for high-
switching frequency application.
Any stray inductance involved by the load current may cause distortion of the drain-to-source voltage waveform, leading to premature turn-off of
the synchronous MOSFET. In order to avoid this issue, drain-voltage sensing should be done as physically close to the drain terminals as
possible. The PCB track length between the controller drain pin and MOSFET’s terminal should be kept less than 10mm. MOSFET packages with
low internal-wire-bond inductance are preferred for high-switching frequency power conversion to minimize body diode conduction.
After the primary MOSFET turns-off, its drain voltage oscillates due to reverse recovery of the snubber diode. These high-frequency oscillations
are reflected across the transformer to the drain terminal of the synchronous MOSFET. The synchronous controller senses the drain-voltage
ringing, causing its Gate output voltage to oscillate. The synchronous MOSFET cannot be fully enhanced until the drain voltage stabilizes.
In order to prevent this issue, the oscillations on the primary MOSFET can be damped with either a series resistor Rd to the snubber diode or an
R-C network across the diode. Both methods reduce the oscillations by softening the snubber diode’s reverse recovery characteristic.
Figure 4 - Primary side snubber network to reduce drain voltage oscillations
ZXGD3107N8
Document Number DS37887 Rev. 1 - 2
11 of 13
www.diodes.com
August 2015
© Diodes Incorporated

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