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PDF C3092SH-DTC Data sheet ( Hoja de datos )
| Número de pieza | C3092SH-DTC | |
| Descripción | Silicon Avalanche Photodiodes | |
| Fabricantes | PerkinElmer Optoelectronics | |
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Silicon Avalanche Photodiodes
C30902 Series
High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications
Overview
PerkinElmer’s C30902EH avalanche
photodiode is fabricated with a double-
diffused “reach-through” structure. This
structure provides high responsivity
between 400 and 1000 nm as well as
extremely fast rise and fall times at all
wavelengths. The responsivity of the
device is independent of modulation
frequency up to about 800 MHz. The
detector chip is hermetically-sealed
behind a flat glass window in a modified
TO-18 package. The useful diameter of
the photosensitive surface is 0.5 mm.
PerkinElmer’s C30921EH is packaged in
a lightpipe TO-18 which allows efficient
coupling of light to the detector from
either a focused spot or an optical fiber
up to 0.25 mm in diameter.
The hermetically-sealed TO-18 package
allows fibers to be epoxied to the end of
the lightpipe to minimize signal losses
without fear of endangering detector
stability.
The C30902SH and C30921SH are
selected C30902EH and C30921EH
photodiodes having extremely low noise
and bulk dark-current. They are intended
for ultra-low light level applications
(optical power less than 1 pW) and can
be used in either their normal linear mode
(VR<VBR) at gains up to 250 or greater, or
as photon counters in the “Geiger” mode
(VR > VBR) where a single photoelectron
may trigger an avalanche pulse of about
108 carriers. In this mode, no amplifiers
are necessary and single-photon
detection probabilities of up to
approximately 50% are possible.
Photon-counting is also advantageous
where gating and coincidence techniques
are employed for signal retrieval.
Features and Benefits
• High quantum efficiency of
77% typical @ 830 nm
• C30902SH and C30921SH
can be operated in “Geiger”
mode
• Hermetically sealed package
• Low Noise at room
temperature
• High responsivity – internal
avalanche gains in excess of
150
• Spectral response range –
(10% points) 400 to 1000 nm
• Time response – typically 0.5
ns
• Wide operating temperature
range - -40°C to +70°C
• RoHS-compliant
Applications
• LIDAR
• Laser range finder
• Small-signal fluorescence
• Photon counting
www.optoelectronics.perkinelmer.com
1 page  
The thermistor located inside the unit can be used to monitor the APD temperature and can be
used to implement a TE cooler feedback loop to keep the APD at a constant temperature
or/and to implement a temperature compensation on the APD bias voltage. A proper heat-sink
is required to dissipate the heat generated by the APD and the TE cooler.
RoHS Compliance
This series of APDs are designed and built to be fully compliant with the European Union
Directive 2002/95EEC – Restriction of the use of certain Hazardous Substances in Electrical
and Electronic equipment.
Custom Designs
Recognizing that different applications have different performance requirements, PerkinElmer
offers a wide range of customization of these APDs to meet your design challenges. Dark
count selection, custom device testing and packaging are among many of the application
specific solutions available.
1000
100
Figure 1
Typical spectral responsivity
Responsivity, C30902EH, C30921EH
10 Responsivity, C30902SH, C30921SH
1
400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100
Wavelength - nm
www.optoelectronics.perkinelmer.com
Silicon Avalanche Photodiodes
5
5 Page 
Passive-Quenching Circuit
The simplest, and in many case a perfectly adequate method of quenching a breakdown pulse,
is through the use of a current limiting load resistor. An example of such a “passive”
quenching is shown in Figure 14. The load-line of the circuit is shown in Figure 8. To be in the
conducting state at VBR two conditions must be met:
1. The Avalanche must have been triggered by either a photoelectron or a bulk-
generated electron entering at the avalanche region of the diode. (Note: holes are
inefficient at starting avalanches in silicon.) The probability of an avalanche being
initiated is discussed above.
2. To continue to be in the conducting state a sufficiently large current, called the latching
current ILATCH, must be passing through the device so that there is always an electron
or hole in the avalanche region. Typically in the C30902SH and C30921SH, ILATCH =
50μA. For currents (VB-VBR)/RL, much greater than ILATCH, the diode remains
conducting. If the current (VR-VBR)/RL, is much less than ILATCH, the diode switches
almost immediately to the non-conducting state. If (VR-VBR)/RL is approximately equal
to ILATCH, then the diode will switch at an arbitrary time from the conducting to the non-
conducting state depending on when the number of electrons and holes in the
avalanche region statistically fluctuates to zeros.
When RL is large, the photodiode is normally conducting, and the operating point is at VR-IDSRL
in the non-conducting state. Following an avalanche breakdown, the device recharges to the
voltage VR-IDSRL with the time constant RLC where C is the total device capacitance including
stray capacitance. Using C = 1.6pF and RL = 200.2kΩ a recharge time constant of 0.32 μs is
calculated. The rise-time is fast, 5 to 50ns, and decreases as VR-VBR increases, and is very
dependent on the capacitances of the load resistors, leads, etc. The jitter at the half-voltage
point is typically the same order of magnitude as the rise-time. For timing purposes where it is
important to have minimum jitter, the lowest possible threshold of the rising pulse should be
used.
VR
C30902
6
5
4
3
Figure 14
Sample of passive quench circuit
R1=200k
2
To Scope 1
R2=200
0
0 100 200 300 400 500 600 700 800 900 1000
Time (ns)
www.optoelectronics.perkinelmer.com
Silicon Avalanche Photodiodes
11
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